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1SV331

型号:

1SV331

描述:

有用的VCO / TCXO[ Useful for VCO/TCXO ]

品牌:

TOSHIBA[ TOSHIBA ]

页数:

3 页

PDF大小:

76 K

1SV331  
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type  
1 S V 3 3 1  
Useful for VCO/TCXO  
Small Package  
1V 4V  
Low Series Resistance : r = 0.45 (typ.)  
High Capacitance Ratio: C /C = 3.75 (typ.)  
s
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Reverse voltage  
V
10  
125  
V
R
Junction temperature  
Storage temperature range  
T
°C  
°C  
j
T
55~125  
stg  
Weight 0.0014 g  
000707EAA1  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the  
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and  
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or  
damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the  
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling  
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal  
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are  
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or  
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy  
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control  
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document  
shall be made at the customer’s own risk.  
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by  
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its  
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or  
others.  
The information contained herein is subject to change without notice.  
2000-09-11 1/3  
1SV331  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 1 µA  
R
10  
3
V
R
Reverse current  
I
C
C
V
V
V
= 10 V  
nA  
R
R
R
R
= 1 V, f = 1 MHz  
= 4 V, f = 1 MHz  
17  
18  
19  
1V  
4V  
Capacitance  
pF  
4.25  
3.5  
4.8  
3.75  
0.45  
5.43  
Capacitance ratio  
Series resistance  
C /C  
1V 4V  
r
V
= 1 V, f = 470 MHz  
0.7  
s
R
Marking  
V 9  
2000-09-11 2/3  
1SV331  
r – V  
s
C
V
– V  
R
R
100  
10  
1
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
f = 1 MHz  
= 100 m Vrms  
f = 470 MHz  
V
sig  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.1  
1
10  
Reverse voltage  
V
(V)  
Reverse voltage  
V
(V)  
R
R
2000-09-11 3/3  
厂商 型号 描述 页数 下载

TOSHIBA

1SV100 硅外延平面型变容二极管[ SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE ] 3 页

TOSHIBA

1SV101 变容二极管( FM调谐器应用)[ VARIABLE CAPACITANCE DIODE (FM TUNER APPLICATIONS) ] 3 页

TOSHIBA

1SV101(F) [ Diode VAR Cap Single 15V 28pF 3-Pin Mini ] 3 页

TOSHIBA

1SV102 变容二极管( AM无线电波段调整应用程序)[ VARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS) ] 3 页

TOSHIBA

1SV103 变容二极管, FM收音机波段调谐应用[ Variable Capacitance Diode, FM Radio Band Tuning Applications ] 2 页

NEC

1SV118 [ Variable Capacitance Diode, 600pF C(T), Silicon, Hyperabrupt, TO-92, 2 PIN ] 2 页

HITACHI

1SV121 硅外延平面PIN二极管的高频衰减器[ Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ] 3 页

TAYCHIPST

1SV121 硅外延平面PIN二极管[ SILICON EPITAXIAL PLANAR PIN DIODE ] 2 页

HITACHI

1SV121RX [ Pin Diode, 100V V(BR), Silicon, DO-34 ] 3 页

RENESAS

1SV121RX [ 100V, SILICON, PIN DIODE, DO-34 ] 2 页

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