找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

1SV315

型号:

1SV315

描述:

Variabe电阻衰减器使用[ Variabe resistance Attenuator Use ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

3 页

PDF大小:

33 K

Ordering number:ENN6261  
Silicon Epitaxial Pin Diode  
1SV315  
Variabe resistance Attenuator Use  
Features  
Package Dimensions  
unit:mm  
· Ultrasmall-sized package facilitates high-density  
mounting and permits 1SV315-applied equipment to  
be made smaller.  
· Small interterminal capacitance (C=0.23pF typ).  
1246A  
[1SV315]  
0.3  
Electrical Connection  
0.15  
3
Cathode / Anode  
3
0 to 0.1  
0.6  
1
2
0.3  
0.65 0.65  
2.0  
0.9  
1 : Anode  
1
2
Anode  
Cathode  
2 : Cathode  
3 : Cathode/Anode  
SANYO : MCP  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Reverse Voltage  
Forward Current  
V
R
50  
50  
V
mA  
mW  
˚C  
I
F
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
125  
Tj  
Tstg  
–55 to +125  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
50  
max  
Reverse Voltage  
Reverse Current  
Forward Voltage  
V
I
I
=10µA  
=50V  
R
V
µA  
V
R
R
V
0.1  
R
V
I =50mA  
0.95  
1.0  
F
F
Interterminal Capacitance  
C
V
=50V, f=1MHz  
0.23  
2400  
6
pF  
R
I =10µA, f=100MHz  
F
I =10mA, f=100MHz  
F
Series Resistance  
rs  
4
9
Note ) The specifications shown above are for each individual diode.  
Marking : UV  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
73099GI (KT) No.6261–1/3  
1SV315  
I
-- V  
C -- V  
F
F
R
100  
1.0  
7
f=1MHz  
5
Ta=25°C  
3
2
7
10  
7
5
5
3
2
1.0  
3
2
7
5
3
2
0.1  
7
5
3
2
0.01  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
IT00993  
0.1  
1.0  
10  
100  
IT00994  
Forward Voltage, V -- V  
Reverse Voltage, V -- V  
R
F
I
-- V  
rs -- f  
R
R
10000  
5
3
2
7
5
10  
7
5
3
3
2
2
1.0  
7
5
1000  
3
2
7
5
100µA  
0.1  
7
5
3
2
3
2
0.01  
0
10  
20  
30  
40  
50  
60  
IT00995  
Reverse Voltage, V -- V  
100  
R
rs -- I  
F
7
5
10000  
1mA  
7
5
3
2
3
2
1000  
7
5
3
2
5mA  
10  
100  
10mA  
7
5
7
5
3
2
3
2
10  
7
5
3
2
1.0  
0.01  
1.0  
1.0  
2
3
5
7
2
3
5
7
2
3
5 7  
2
3
5
7
2
3
5
7
2
3
5 7  
0.1  
1.0  
10  
IT01010  
10  
100  
1000  
IT00996  
Forward Current, I -- mA  
Frequency, f -- MHz  
F
No.6261–2/3  
1SV315  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of July, 1999. Specifications and information herein are subject to  
change without notice.  
PS No.6261–3/3  
厂商 型号 描述 页数 下载

TOSHIBA

1SV100 硅外延平面型变容二极管[ SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE ] 3 页

TOSHIBA

1SV101 变容二极管( FM调谐器应用)[ VARIABLE CAPACITANCE DIODE (FM TUNER APPLICATIONS) ] 3 页

TOSHIBA

1SV101(F) [ Diode VAR Cap Single 15V 28pF 3-Pin Mini ] 3 页

TOSHIBA

1SV102 变容二极管( AM无线电波段调整应用程序)[ VARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS) ] 3 页

TOSHIBA

1SV103 变容二极管, FM收音机波段调谐应用[ Variable Capacitance Diode, FM Radio Band Tuning Applications ] 2 页

NEC

1SV118 [ Variable Capacitance Diode, 600pF C(T), Silicon, Hyperabrupt, TO-92, 2 PIN ] 2 页

HITACHI

1SV121 硅外延平面PIN二极管的高频衰减器[ Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ] 3 页

TAYCHIPST

1SV121 硅外延平面PIN二极管[ SILICON EPITAXIAL PLANAR PIN DIODE ] 2 页

HITACHI

1SV121RX [ Pin Diode, 100V V(BR), Silicon, DO-34 ] 3 页

RENESAS

1SV121RX [ 100V, SILICON, PIN DIODE, DO-34 ] 2 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.153055s