IXFH 6N100F VDSS
IXFT 6N100F ID25
= 1000 V
Power MOSFETs
=
6 A
F-Class: MegaHertz Switching
RDS(on) = 1.9 Ω
trr ≤ 250 ns
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
TO-247AD(IXFH)
Symbol
Test Conditions
Maximum Ratings
(TAB)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
1000
V
V
VGS
Continuous
Transient
±20
±30
V
V
TO-268 (IXFT) Case Style
VGSM
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
6
24
6
A
A
A
G
(TAB)
S
EAR
EAS
TC = 25°C
TC = 25°C
20
500
mJ
mJ
G = Gate,
S = Source,
D = Drain,
TAB = Drain
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
15
V/ns
PD
TJ
TC = 25°C
180
W
Features
●
-55 ... +150
°C
RF capable MOSFETs
●
Double metal process for low gate
resistance
TJM
150
-55 ... +150
°C
°C
Tstg
● Ruggedpolysilicongatecellstructure
● Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mountingtorque
TO-247
1.13/10 Nm/lb.in.
●
Low package inductance
- easy to drive and to protect
Weight
TO-247
TO-268
6
4
g
g
● Fast intrinsic rectifier
Applications
● DC-DC converters
Symbol
VDSS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
● Switched-mode and resonant-mode
power supplies, >500kHz switching
● DC choppers
VGS = 0 V, ID = 500uA
1000
V
● 13.5 MHz industrial applications
● Pulse generation
● Laser drivers
● RF amplifiers
VGS(th)
IGSS
VDS = VGS, ID = 2.5 mA
VGS = ±20 V, VDS = 0
3.0
5.5 V
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
50 µA
1 mA
Advantages
TJ = 125°C
● Space savings
● High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
1.9 Ω
98732B (9/02)
© 2002 IXYS All rights reserved
