6N10
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
VDS=80V, VGS=0V
1
Drain-Source Leakage Current
µA
VDS=80V, VGS=0V, TJ=125°C
VDS=80V, VGS=0V, TJ=175°C
VGS=+20V, VDS=0V
50
250
Forward
Reverse
+100 nA
-100 nA
A
Gate- Source Leakage Current
IGSS
V
GS=-20V, VDS=0V
On-State Drain Current (Note 2)
ON CHARACTERISTICS
Gate Threshold Voltage
ID(on)
VDS=5V, VGS=10V
8.0
1.0
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3A
3.0
0.160 0.200
0.350
V
ꢀ
S
Static Drain-Source On-State Resistance
(Note 2)
VGS=10V, ID=3A, TJ=125°C
VGS=10V, ID=3A, TJ=175°C
VGS=4.5, ID=1.0A
0.450
0.180 0.225
8.5
Forward Transconductance (Note 2)
DYNAMIC PARAMETERS (Note1)
Input Capacitance
VDS=15V, ID=3A
CISS
COSS
CRSS
240
42
pF
pF
pF
V
GS=0V, VDS=25V, f=1.0MHz
DS=50V, VGS=5V, ID=6.5A
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
Gate to Source Charge (Note 3)
Gate to Drain Charge (Note 3)
Turn-ON Delay Time (Note3)
Rise Time (Note 3)
17
QG
QGS
QGD
tD(ON)
tR
2.7
0.6
0.7
7
4.0
nC
nC
nC
ns
ns
ns
ns
V
11
12
12
14
VDD=50V, RL=7.5ꢀ, ID≈6.5A,
VGEN=10V, RG=2.5 ꢀ
8
Turn-OFF Delay Time (Note 3)
Fall-Time (Note 3)
tD(OFF)
tF
8
9
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C)
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.0
A
Drain-Source Diode Forward Voltage (Note 2)
Reverse Recovery Time
VSD
tRR
IF=6.5A, VGS=0V
0.9
35
1.3
60
V
IF=6.5A, di/dt=100A/µs
ns
Notes: 1. Guaranteed by design, not subject to production testing.
2. Pulse test; pulse width ≤300 ≤μs, duty cycle ≤2%.
3. Independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R502-486.a
www.unisonic.com.tw
