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2SK3262-01MR

型号:

2SK3262-01MR

描述:

N沟道硅功率MOS -FET[ N-CHANNEL SILICON POWER MOS-FET ]

品牌:

FUJI[ FUJI ELECTRIC ]

页数:

4 页

PDF大小:

139 K

FUJI POWER MOS-FET  
2SK3262-01MR  
N-CHANNEL SILICON POWER MOS-FET  
TO-220F15  
Features  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
Applications  
2.54  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DC converters  
3. Source  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Equivalent circuit schematic  
Item  
Drain-source voltage  
Symbol  
VDS  
ID  
Rating  
200  
±20  
±80  
±20  
355  
2
Unit  
V
Drain(D)  
Continuous drain current  
Pulsed drain current  
A
ID(puls]  
VGS  
EAV*1  
PD  
A
Gate-source voltage  
V
Maximum Avalanche Energy  
Max. power dissipation Ta=25  
mJ  
W
W
°C  
°C  
Gate(G)  
°C  
°C  
Source(S)  
Tc=25  
PD  
45  
Operating and storage  
temperature range  
Tch  
+150  
-55 to +150  
Tstg  
*1 L=1.6mH, Vcc=24V  
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Item  
Test Conditions  
Symbol  
V(BR)DSS  
VGS(th)  
Drain-source breakdown voltaget  
Gate threshold voltage  
ID=1mA  
ID=1mA  
VGS=0V  
V
200  
VDS=VGS  
V
1.0  
1.5  
10  
0.2  
2.0  
500  
0.5  
100  
Tch=25°C  
µA  
mA  
nA  
m  
VDS=200V  
VGS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
VGS=±20V  
Gate-source leakage current  
VDS=0V  
10  
110  
85  
IGSS  
ID=10A VGS=4V  
ID=10A VGS=10V  
ID=10A VDS=25V  
Drain-source on-state resistance  
150  
100  
RDS(on)  
9.0  
19.0  
S
Forward transcondutance  
Input capacitance  
gfs  
1700  
290  
185  
10  
2550  
435  
280  
15  
VDS=25V  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
Output capacitance  
VGS=0V  
Reverse transfer capacitance  
Turn-on time ton  
f=1MHz  
VCC=100V ID=20A  
45  
70  
VGS=10V  
ns  
225  
120  
340  
180  
Turn-off time toff  
RGS=10 Ω  
td(off)  
tf  
20  
A
Avalanche capability  
L=100µH Tch=25°C  
IAV  
0.93  
250  
2.90  
1.40  
V
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
IF=20A VGS=0V Tch=25°C  
IF=20A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
VSD  
ns  
µC  
trr  
Qrr  
Thermalcharacteristics  
Item  
Min.  
Typ.  
Max. Units  
Symbol  
Test Conditions  
Rth(ch-c)  
channel to case  
2.78  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
62.5  
°C/W  
1
2SK3262-01MR  
FUJI POWER MOSFET  
Characteristics  
Power Dissipation  
Safe operating area  
PD=f(Tc)  
ID=f(VDS):D=0.01,Tc=25°C  
102  
101  
100  
50  
40  
30  
20  
10  
0
t=  
1µs  
10µs  
D.C.  
100µs  
1ms  
10ms  
t
t
D=  
T
100ms  
T
10-1  
100  
101  
102  
103  
0
50  
100  
150  
Tc [°C]  
VDS [V]  
Typical output characteristics  
ID=f(VDS):80µs pulse test,Tc=25°C  
Typical transfer characteristics  
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C  
50  
40  
30  
20  
10  
0
100  
VGS=20V  
15V  
10V 5.0V  
4.5V  
4.0V  
10  
3.5V  
1
3.0V  
0.1  
0
1
2
3
VDS [V]  
4
5
6
0
1
2
3
4
5
VGS [V]  
Typical Drain-Source on-State Resistance  
RDS(on)=f(ID):80µs pulse test,Tch=25°C  
Typical forward transconductance  
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C  
0.22  
0.20  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
102  
101  
100  
10-1  
VGS=  
3.5V  
3.0V  
4.0V  
4.5V  
5.0V  
10V  
15V  
20V  
10-1  
100  
101  
102  
0
10  
20  
30  
ID [A]  
40  
50  
60  
ID [A]  
2
2SK3262-01MR  
FUJI POWER MOSFET  
Gate Threshold Voltage vs. Tch  
Drain-source on-state resistance  
VGS(th)=f(Tch):VDS=VGS,ID=1mA  
RDS(on)=f(Tch):ID=10A,VGS=10V  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
300  
250  
200  
150  
100  
50  
max.  
typ.  
max.  
typ.  
min.  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [°C]  
Tch [°C]  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=20A,Tch=25°C  
Typical capacitances  
C=f(VDS):VGS=0V,f=1MHz  
200  
180  
160  
140  
120  
100  
80  
20  
18  
16  
14  
12  
10  
8
100n  
VDS  
VGS  
Vcc=160V  
100V  
10n  
40V  
Ciss  
1n  
60  
6
40  
4
Coss  
Crss  
20  
2
0
0
100p  
10-2  
10-1  
100  
101  
102  
0
20  
40  
60  
80  
100  
Qg [nC]  
120  
140  
160  
180  
200  
VDS [V]  
Typical Forward Characteristics of Reverse Diode  
-ID=f(VSD):80µs pulse test,Tch=25°C  
Maximum Avalanche Current vs. starting Tch  
I(AV)=f(starting Tch),Non Repetitive  
50  
40  
30  
20  
10  
0
25  
20  
15  
10  
5
10V  
VGS=0V  
0
0
25  
50  
75  
100  
125  
150  
0.0  
0.2  
0.4  
0.6  
VSD [V]  
0.8  
1.0  
1.2  
Starting Tch [°C]  
3
2SK3262-01MR  
FUJI POWER MOSFET  
Maximum Avalanche energy vs. starting Tch  
Eas=f(starting Tch):Vcc=24VA,IV<=20A,Non-Repetitive  
Transient Thermal Impedance  
Zth(ch-c)=f(t):D=t/T  
101  
100  
500  
D=0.5  
400  
300  
200  
100  
0
0.2  
0.1  
0.05  
10-1  
10-2  
10-3  
0.02  
0.01  
t
0
t
D=  
T
T
-6  
-5  
10  
-4  
10  
10  
10-3  
10-2  
10-1  
100  
t [sec]  
0
25  
50  
75  
100  
125  
150  
Starting Tch [°C]  
4
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