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2SK615

型号:

2SK615

描述:

硅N沟道MOS FET[ SILICON N-CHANNEL MOS FET ]

品牌:

PANASONIC[ PANASONIC ]

页数:

4 页

PDF大小:

88 K

Silicon MOS FETs (Small Signal)  
2SK0615 (2SK615)  
Silicon N-Channel MOS FET  
For switching  
Unit: mm  
I Features  
G Low ON-resistance  
G High-speed switching  
2.5 0.1  
6.9 0.1  
(1.5)  
(1.0)  
(1.5)  
G Allowing to be driven directly by CMOS and TTL  
G M type package, allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
R 0.9  
R 0.7  
I Absolute Maximum Ratings (Ta = 25°C)  
(0.85)  
0.55 0.1  
0.45 0.05  
Parameter  
Drain to Source voltage  
Gate to Source voltage  
Drain current  
Symbol  
VDS  
Ratings  
Unit  
V
80  
VGSO  
ID  
20  
V
±0.5  
A
1
2
3
1: Source  
2: Drain  
3: Gate  
(2.5) (2.5)  
Max drain current  
IDP  
±1  
A
*
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
1
W
°C  
°C  
EIAJ: SC-71  
M-A1 Package  
Tch  
150  
Tstg  
55 to +150  
* PC board: Copper foil of the drain portion should have a area of 1cm2 or  
more and the board thickness should be 1.7mm.  
I Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
IDSS  
Conditions  
VDS = 60V, VGS = 0  
min  
typ  
max  
10  
Unit  
µA  
µA  
V
Drain to Source cut-off current  
Gate to Source leakage current  
IGSS  
VGS = 20V, VDS = 0  
IDS = 100µA, VGS = 0  
ID = 1mA, VDS = VGS  
ID = 0.5A, VGS = 10V  
0.1  
Drain to Source breakdown voltage VDSS  
80  
Gate threshold voltage  
Vth  
1.5  
3.5  
4
V
1
*
Drain to Source ON-resistance  
Forward transfer admittance  
RDS(on)  
| Yfs |  
2
300  
45  
30  
8
ID = 0.2A, VDS = 15V, f = 1kHz  
mS  
pF  
pF  
pF  
ns  
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
VDS = 10V, VGS = 0, f = 1MHz  
1, 2  
*
Turn-on time  
Turn-off time  
ton  
15  
20  
1, 2  
*
toff  
ns  
1 Pulse measurement  
2 ton, toff measurement circuit  
*
*
10%  
Vout  
Vin  
Vin  
10%  
68  
Vin = 10V  
90%  
90%  
Vout  
Vout  
VDD = 30V  
t = 1µS  
f = 1MHZ  
50Ω  
ton  
toff  
Note) The part number in the parenthesis shows conventional part number.  
1
Silicon MOS FETs (Small Signal)  
2SK0615  
PD Ta  
ID VDS  
ID VGS  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Ta=25˚C  
Copper foil of the drain portion  
should have a area of 1cm2  
or more and the board  
VDS=10V  
Ta=25˚C  
VGS=5.5V  
thickness should be 1.7mm.  
5V  
4.5V  
4V  
3.5V  
3V  
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
0
2
4
6
8
10  
(
)
( )  
V
( )  
Gate to source voltage VGS V  
Ambient temperature Ta ˚C  
Drain to source voltage VDS  
| Yfs | VGS  
Ciss, Coss, Crss VDS  
RDS(on) VGS  
600  
500  
400  
300  
200  
100  
0
120  
100  
80  
60  
40  
20  
0
6
5
4
3
2
1
0
VDS=15V  
f=1kHz  
Ta=25˚C  
VGS=0  
f=1MHz  
Ta=25˚C  
ID=500mA  
Ta=75˚C  
25˚C  
Ciss  
25˚C  
Coss  
Crss  
0
1
2
3
4
5
6
1
3
10  
30  
100 300 1000  
0
4
8
12  
16  
20  
( )  
V
( )  
V
( )  
Gate to source voltage VGS V  
Gate to source voltage VGS  
Drain to source voltage VDS  
RDS(on) Ta  
6
5
4
3
2
1
0
ID=500mA  
VGS=5V  
10V  
50  
25  
0
25  
50  
75  
(
)
Ambient temperature Ta ˚C  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government  
if any of the products or technologies described in this material and controlled under the "Foreign  
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteris-  
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-  
tual property right or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the  
product or technologies as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general  
electronic equipment (such as office equipment, communications equipment, measuring instru-  
ments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without  
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of  
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that  
the latest specifications satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-  
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-  
wise, we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of  
incidence of break down and failure mode, possible to occur to semiconductor products. Measures  
on the systems such as redundant design, arresting the spread of fire or preventing glitch are  
recommended in order to prevent physical injury, fire, social damages, for example, by using the  
products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including  
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets  
are individually exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2002 JUL  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  
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