IXSH 15N120BD1
IXST 15N120BD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXSH) Outline
IC = IC90; VCE = 10 V,
Note 2
7
9.5
S
Cies
Coes
Cres
1400
120
37
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
57
14
25
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
tfi
30
25
ns
ns
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
Min. Max. Min. Max.
IC = IC90, VGE = 15 V
RG = 10 W
VCE = 0.8 VCES
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
148
126
300 ns
250 ns
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Note 3
Eoff
1.5
2.9 mJ
E
F
4.32 5.49 0.170 0.216
td(on)
tri
30
25
ns
ns
5.4
6.2 0.212 0.244
Inductive load, TJ = 125°C
G
H
1.65 2.13 0.065 0.084
IC = IC90, V = 15 V
RG = 10 W, GVECE = 0.8 VCES
Note 3
-
4.5
-
0.177
Eon
2.6
mJ
J
K
1.0
1.4 0.040 0.055
10.8 11.0 0.426 0.433
td(off)
tfi
265
298
ns
ns
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Eoff
3.1
mJ
N
1.5 2.49 0.087 0.102
RthJC
RthCK
0.83 K/W
K/W
TO-268AA (D3 PAK)
(TO-247)
0.25
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V
Note 2
TJ = 150OC
TJ = 25OC
1.7
2.5
V
V
IRM
IF = 30A; VGE = 0 V; TJ = 100°C
VR = 100 V; -diF/dt = 100 A/ms
5.5
30
A
trr
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C
ns
RthJC
0.9 K/W
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to
avoidthermalrunaway.
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
2. Pulse test, t £ 300 ms, duty cycle £ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ orincreasedRG.
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
Min. Recommended Footprint
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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