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IXEH40N120D1

型号：

IXEH40N120D1

描述：

NPT3 IGBT[ NPT3 IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

82 K

下载PDF手册
IXEH 40N120  
IXEH 40N120D1  
NPT3 IGBT  
IC25  
VCES  
= 60 A  
= 1200 V  
VCE(sat)typ. = 2.4 V  
C
E
C
E
TO-247 AD  
G
G
G
C
E
B)  
IXEH40N120  
IXEH40N120D1  
Features  
IGBT  
• NPT3 IGBT  
Symbol  
VCES  
Conditions  
Maximum Ratings  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
TVJ = 25°C to 150°C  
1200  
V
V
- fast switching  
±
VGES  
20  
- short tail current for optimized  
performance in resonant circuits  
• optional HiPerFREDTM diode  
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
• TO-247 package  
- industry standard outline  
- epoxy meets UL 94V-0  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
60  
40  
A
A
±
ICM  
VCEK  
VGE = 15 V; RG = 39 Ω; TVJ = 125°C  
50  
VCES  
A
µs  
W
RBSOA, Clamped inductive load; L = 100 µH  
±
tSC  
(SCSOA)  
VCE = 900V; VGE = 15 V; RG = 39 Ω; TVJ = 125°C  
non-repetitive  
10  
Ptot  
TC = 25°C  
300  
Applications  
• AC drives  
Symbol  
Conditions  
Characteristic Values  
• DC drives and choppers  
• Uninteruptible power supplies (UPS)  
• switched-mode and resonant-mode  
power supplies  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VCE(sat)  
IC = 40 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.4  
2.8  
3.0  
V
V
• inductive heating, cookers  
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.4 mA  
mA  
0.4  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
85  
50  
440  
50  
6.1  
3.0  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 40 A  
±
VGE = 15 V; RG = 39 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 25 A  
2
250  
nF  
nC  
RthJC  
0.42 K/W  
© 2003 IXYS All rights reserved  
1 - 4  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
IXEH 40N120  
IXEH 40N120D1  
Diode [D1 version only]  
Equivalent Circuits for Simulation  
Conduction  
Symbol  
Conditions  
Maximum Ratings  
IF25  
IF90  
TC = 25°C  
TC = 90°C  
60  
35  
A
A
IGBT (typ. at VGE = 15 V; TJ = 125°C)  
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
V0 = 0.95 V; R0 = 45 mΩ  
Diode (typ. at TJ = 125°C)  
IF = 40 A; TVJ = 25°C  
TVJ = 125°C  
2.6  
2.0  
3.0  
V
V
V0 = 1.26V; R0 = 15 mΩ  
Thermal Response  
IRM  
trr  
Erec(off)  
51  
180  
1.8  
A
ns  
mJ  
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C  
VR = 600 V; VGE = 0 V  
RthJC  
1.0 K/W  
Component  
Symbol  
IGBT  
Cth1 = 0.007 J/K; Rth1 = 0.215 K/W  
Cth2 = 0.187 J/K; Rth2 = 0.205 K/W  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-55...+150  
-55...+150  
°C  
°C  
Diode  
Cth1 = 0.006 J/K; Rth1 = 0.649 K/W  
Cth2 = 0.113 J/K; Rth2 = 0.351 K/W  
Md  
mounting torque  
Conditions  
0.8...1.2  
Nm  
TO-247 AD Outline  
Symbol  
Characteristic Values  
min. typ. max.  
RthCH  
with heatsink compound  
0.25  
K/W  
g
Weight  
6
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
© 2003 IXYS All rights reserved  
2 - 4  
IXEH 40N120  
IXEH 40N120D1  
120  
A
120  
A
VGE = 17 V  
VGE = 17 V  
15 V  
15 V  
13 V  
100  
100  
IC  
IC  
13 V  
11 V  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
11 V  
9 V  
9 V  
TVJ = 125°C  
TVJ = 25°C  
V
V
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
VCE  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
90  
A
120  
A
VCE = 20 V  
75  
IF  
100  
IC  
60  
80  
60  
40  
20  
0
45  
TVJ = 125°C  
TVJ = 25°C  
30  
TVJ = 125°C  
15  
0
TVJ = 25°C  
10  
V
0
1
2
3
4
4
6
8
12  
VGE  
14 V 16  
VF  
Fig. 3 Typ. transfer characteristics  
Fig. 4 Typ. forward characteristics of  
freewheelingdiode  
20  
10  
K/W  
V
diode [D1 version only]  
IGBT  
15  
ZthJC  
1
VGE  
10  
5
0.1  
0.01  
single pulse  
VCE = 600 V  
IC = 35 A  
MUBW3512E7  
0
0.001  
s
0.00001 0.0001 0.001  
0.01  
0.1  
1
10  
0
40  
80  
120  
160nC 200  
QG  
t
Fig. 5 Typ. turn on gate charge  
Fig. 6 Typ. transient thermal impedance  
© 2003 IXYS All rights reserved  
3 - 4  
IXEH 40N120  
IXEH 40N120D1  
20  
100  
ns  
6
mJ  
4
1200  
ns  
VCE = 600 V  
VGE = ±15 V  
RG = 39 Ω  
TVJ = 125°C  
t
d(on)  
mJ  
16  
Eoff  
1000  
80  
70  
60  
50  
40  
30  
20  
10  
0
Eoff  
Eon  
t
t
800  
12  
8
t
r
600  
VCE = 600 V  
GE = ±15 V  
V
td(off)  
400  
E
on  
2
0
RG = 39 Ω  
TVJ = 125°C  
4
Erec(off)  
200  
tf  
0
0
80  
A
A
0
20  
40  
60  
0
20  
40  
60  
80  
IC  
IC  
Fig. 7  
Typ. turn on energy and switching  
times versus collector current  
Fig. 8  
Typ. turn off energy and switching  
times versus collector current  
160  
ns  
800  
ns  
8
mJ  
6
4
VCE = 600 V  
GE = ±15 V  
VCE = 600 V  
mJ  
V
V
GE = ±15 V  
E
on  
IC = 35 A  
TVJ = 125°C  
IC = 35 A  
TVJ = 125°C  
Eoff  
Eon  
120  
3
2
1
0
600  
400  
200  
0
t
t
t
Eoff  
d(on)  
4
2
0
80  
td(off)  
t
r
40  
Erec(off)  
tf  
0
Ω
10  
20  
30  
40  
50  
60  
RG  
70 Ω 80  
10  
20  
30  
40  
50  
60  
70  
80  
RG  
Fig. 9 Typ. turn on energy and switching  
times versus gate resistor  
Fig.10 Typ. turn off energy and switching  
times versus gate resistor  
12  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
TVJ = 125°C  
15Ω  
RG  
39  
=
15  
Ω
TVJ = 125°C  
VR = 600 V  
IRM  
I=30 A  
VR = 600 V  
24  
Ω
70A  
Ω
24  
10  
8
F
39Ω  
Ω
56  
Ω
56Ω  
50A  
75  
Ω
RG=  
75Ω  
35A  
Ω
75  
6
tRR  
Ω
56  
39Ω  
Ω
24  
Ω
15  
IF=  
15A  
4
7,5A  
2
0
0
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
-diF/dt [A/µs]  
-diF/dt [A/µs]  
Fig. 11 Typ. turn off characteristics  
of free wheeling diode  
Fig. 12 Typ. turn off characteristics  
of free wheeling diode  
© 2003 IXYS All rights reserved  
4 - 4  
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