FUJI POWER MOS-FET
2SK3337-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Drain-source voltage
Symbol
VDS
ID
Rating
1000
±7
Unit
V
Drain(D)
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
IAR *2
EAV*1
PD
±28
±30
7
A
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
A
Gate(G)
463
255
+150
mJ
W
°C
Source(S)
Tch
Tstg
-55 to +150
°C
<
*1 L=17.3mH, Vcc=100V *2 Tch=150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Item
Test Conditions
Symbol
V(BR)DSS
VGS(th)
Drain-source breakdown voltaget
Gate threshold voltage
ID=1mA
ID=1mA
VGS=0V
V
100
VDS=VGS
V
2.5
3.0
10
0.2
10
1.54
5.5
1480
3.5
500
1.0
100
2.0
Tch=25°C
µA
mA
nA
VDS=1000V
VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
VGS=±30V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VDS=0V
IGSS
ID=3.5A VGS=10V
RDS(on)
gfs
Ω
S
2.7
ID=3.5A VDS=25V
VDS=25V
2220
pF
Ciss
170
75
255
113
38
Output capacitance
VGS=0V
Coss
Crss
td(on)
tr
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=7A
ns
25
50
75
VGS=10V
160
70
240
105
126
35
Turn-off time toff
td(off)
tf
RGS=10 Ω
84
nC
Total gate charge
Vcc=500V
ID=7A
QG
QGS
QGD
IAV
23
Gate-Source charge
Gete-Drain charge
31
47
VGS=10V
7
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=17.3 mH Tch=25°C
1.00
1.50
V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs
Tch=25°C
VSD
trr
Qrr
1.6
µs
µC
15.0
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.490
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
50.0
°C/W
1
