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2SK3058-Z-E2-AZ

型号：

2SK3058-Z-E2-AZ

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

10 页

PDF大小：

318 K

下载PDF手册
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Elnics Corporation  
Issued by: Renesas Electronics Corporation (http://wwesas.com)  
Send any inquiries to http://www.renesas.com/inqu
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please  
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to  
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.  
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights  
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.  
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights  
of Renesas Electronics or others.  
3.  
4.  
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of  
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,  
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by  
you or third parties arising from the use of these circuits, software, or information.  
5.  
When exporting the products or technology described in this document, you should comply with the applicable export control  
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas  
Electronics products or the technology described in this document for any purpose relating to military applications or use by  
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and  
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited  
under any applicable domestic or foreign laws or regulations.  
6.  
7.  
Renesas Electronics has used reasonable care in preparing the information included in this do, but Renesas Electronics  
does not warrant that such information is error free. Renesas Electronics assumes no liabitsoever for any damages  
incurred by you resulting from errors in or omissions from the information included he
Renesas Electronics products are classified according to the following three quality “Standard”, “High Quality”, and  
“Specific”. The recommended applications for each Renesas Electronics producs on the product’s quality grade, as  
indicated below. You must check the quality grade of each Renesas Electronict before using it in a particular  
application. You may not use any Renesas Electronics product for any appcategorized as “Specific” without the prior  
written consent of Renesas Electronics. Further, you may not use any Rlectronics product for any application for  
which it is not intended without the prior written consent of Renesas ics. Renesas Electronics shall not be in any way  
liable for any damages or losses incurred by you or third parties arm the use of any Renesas Electronics product for an  
application categorized as “Specific” or for which the product iended where you have failed to obtain the prior written  
consent of Renesas Electronics. The quality grade of each Rlectronics product is “Standard” unless otherwise  
expressly specified in a Renesas Electronics data sheets ooks, etc.  
“Standard”:  
Computers; office equipment; comons equipment; test and measurement equipment; audio and visual  
equipment; home electronic applmachine tools; personal electronic equipment; and industrial robots.  
“High Quality”: Transportation equipment (aues, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-  
crime systems; safety equind medical equipment not specifically designed for life support.  
“Specific”:  
Aircraft; aerospace eqsubmersible repeaters; nuclear reactor control systems; medical equipment or  
systems for life sup. artificial life support devices or systems), surgical implantations, or healthcare  
intervention (e.gn, etc.), and any other applications or purposes that pose a direct threat to human life.  
8.  
9.  
You should use the Renesas Els products described in this document within the range specified by Renesas Electronics,  
especially with respect to thum rating, operating supply voltage range, movement power voltage range, heat radiation  
characteristics, installatither product characteristics. Renesas Electronics shall have no liability for malfunctions or  
damages arising out oof Renesas Electronics products beyond such specified ranges.  
Although Renesas Elenics endeavors to improve the quality and reliability of its products, semiconductor products have  
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,  
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to  
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a  
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire  
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because  
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system  
manufactured by you.  
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental  
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable  
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS  
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with  
applicable laws and regulations.  
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas  
Electronics.  
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this  
document or Renesas Electronics products, or if you have any other inquiries.  
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-  
owned subsidiaries.  
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.  
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3058  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
PART NUMBER  
2SK3058  
DESCRIPTION  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3058-S  
FEATURES  
• Super Low On-State Resistance  
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A)  
RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A)  
• Low Ciss : Ciss = 2100 pF (TYP.)  
• Built-in Gate Protection Diode  
2SK3058-ZJ  
TO-263  
TO-220SMDNote  
★
2SK3058-Z  
Note TO-220SNage is produced only in  
Japan.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
(TO-220AB)  
Drain to Source Voltage (VGS = 0)  
Gate to Source Voltage (VDS = 0)  
Gate to Source Voltage (VDS = 0)  
Drain Current (DC)  
VDSS  
VGSS(AC)  
VGSS(DC)  
ID(DC)  
ID(pulse
60  
±2
+0  
55  
V
V
A
Drain Current (Pulse) Note1  
±165  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
58  
W
W
°C  
°C  
A
1.5  
(TO-262)  
Tch  
150  
Storage Temperature  
Tstg  
–55 to + 150  
27.5  
Single Avalanche Current Note2  
Single Avalanche Energy N
IAS  
EAS  
75.6  
mJ  
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %  
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0  
(TO-263, TO-220SMD)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2001 NS CP(K)  
Printed in Japan  
D13097EJ2V0DS00 (2nd edition)  
The mark ★ shows major revised points.  
1998, 1999  
©
2SK3058  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
TEST CONDITIONS  
VGS = 10 V, ID = 28 A  
MIN. TYP. MAX. UNIT  
Drain to Source On-state Resistance  
12  
19  
1.6  
42  
17  
27  
mΩ  
mΩ  
V
VGS = 4.0 V, ID = 28 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 28 A  
VDS = 60 V, VGS = 0 V  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V  
Gate to Source Cut-off Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
1.0  
13  
2.0  
S
10  
µA  
µA  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
IGSS  
±10  
Ciss  
2100  
550  
220  
36  
Output Capacitance  
Coss  
Crss  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
F = 1 MHz  
td(on)  
tr  
td(off)  
tf  
ID = 28 A  
★
Rise Time  
VGS = 10 V  
10  
130  
260  
45  
Turn-off Delay Time  
VDD = 30 V  
Fall Time  
RG = 10 Ω  
Total Gate Charge  
QG  
ID = 55 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VDD = 48 V  
7
VGS = 10 V  
13  
IF = 55 A, VGS =
IF = 55 A,
di/dt = s  
1.0  
60  
ns  
nC  
Qrr  
100  
★
TEST CIRCUIT 1 AVALANCHE CAPABILI
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
GS  
R
L
RG  
= 25 Ω  
90%  
V
GS  
Wave Form  
10%  
0
R
G
PG.  
PG.  
50 Ω  
R = 10 Ω  
G
V
DD  
V
GS = 20→0V  
I
D
90%  
90%  
10%  
ID  
V
0
GS  
B
10%  
I
D
0
Wave Form  
I
AS  
VDS  
τ
I
D
t
d(on)  
t
r
t
d(off)  
tf  
VDD  
t
on  
toff  
τ = 1 µs  
Duty Cycle ≤ 1 %  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
PG.  
50 Ω  
VDD  
2
Data Sheet D13097EJ2V0DS  
2SK3058  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
70  
60  
50  
40  
30  
20  
10  
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
- Case Temperature - °C  
0
20 40 60 100 120 140 160  
T
C
T
C
- Caerature - °C  
★
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
10  
ID(pulse)  
P
W
=
1
0
µ
100  
s
µ
s
Limited  
= 10 V)  
1
ms  
ID(DC)  
S
RDS(on)  
(at V  
G
100  
ms  
P
o
DC  
er Disspation  
w
Limited  
1
TC  
= 25˚C  
Single Pulse  
0.1  
0.1  
1
10  
100  
VDS - Drain to Source Vol
TRTHERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
1
R
th(ch-A)= 83.3˚C/W  
th(ch-C)= 2.16˚C/W  
R
0.1  
0.01  
T
C
= 25˚C  
Single Pulse  
0.001  
100  
10  
µ
µ
1m  
10m  
100m  
1
10  
100 1000  
PW - Pulse Width - s  
3
Data Sheet D13097EJ2V0DS  
2SK3058  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
100  
10  
1
Pulsed  
100  
80  
60  
40  
20  
V
GS = 10 V  
T
A
= 125˚C  
75˚C  
25˚C  
−25˚C  
V
GS = 4.0V  
0.1  
Pulsed  
VDS = 10V  
4
0
3
1
0
1
2
3
4 5  
VDS - Drain e Voltage - V  
VGS - Gate to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO E ON-STATE RESISTANCE vs.  
GATE TCE VOLTAGE  
100  
10  
Pulsed  
70  
T
ch = −25˚C  
25˚C  
0  
40  
30  
20  
10  
75˚C  
125˚C  
1
I
D
=28A  
20  
0.1  
0.1  
0
10  
30  
1.0  
1
100  
V
GS - Gate to Source Voltage - V  
I
D
- Drain Cur
GATE TO SOURCE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SON-STATE  
RESISTANDRAIN CURRENT  
80  
60  
40  
20  
0
V
DS = 10V  
= 1mA  
Pulsed  
I
D
2.0  
1.5  
1.0  
V
GS =4.0V  
0.5  
0
V
GS =10V  
−50  
0
50  
100  
150  
0.1  
1
10  
100  
Tch - Channel Temperature - ˚C  
I
D
- Drain Current - A  
4
Data Sheet D13097EJ2V0DS  
2SK3058  
★
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
1000  
Pulsed  
40  
30  
V
GS = 4.0V  
100  
10  
1
V
GS = 10 V  
V
GS = 0 V  
20  
10  
V
GS = 10V  
I
D
= 28A  
0.1  
0
1.0  
- Sourn Voltage - V  
1.5  
0.5  
0
0
−50  
100  
150  
50  
V
SD  
T
ch - Channel Temperature - ˚C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
CHING CHARACTERISTICS  
100 000  
10 000  
V
V
R
DD = 30V  
GS = 10V  
= 10Ω  
V
GS = 0 V  
f = 1MHz  
10
000  
G
tr  
f
t
C
iss  
t
d(off)  
100  
10  
1 000  
100  
t
d(on)  
C
rss  
0.1  
1
100  
0.1  
1
10  
100  
V
DS - Drain to Souge - V  
ID  
- Drain Current - A  
REVEROVERY TIME vs.  
DRAIN ENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1 000  
100  
80  
60  
40  
20  
16  
di/dt=100A/  
µ
s
ID = 55A  
V
GS =0 V  
14  
12  
10  
8
V
DD = 12 V  
30 V  
48 V  
6
10  
1
4
2
0
0.1  
1
10  
100  
0
20  
40  
60  
80  
I
F
- Drain Current - A  
QG  
- Gate Charge - nC  
5
Data Sheet D13097EJ2V0DS  
2SK3058  
★
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
160  
140  
120  
100  
80  
100  
10  
V
R
V
I
DD = 30V  
= 25Ω  
GS = 20 V → 0 V  
AS ≤ 27.5A  
G
IAS = 27.5A  
EAS  
=
75.6  
mJ  
60  
1.0  
0.1  
40  
VDD = 30V  
20  
VGS = 20V→0 V  
RGS = 25Ω  
0
25  
50  
75  
00  
125  
150  
10  
µ
100  
µ
1m  
10m  
Starting Tch - Startnel Temperature - ˚C  
L - Inductive Load - H  
6
Data Sheet D13097EJ2V0DS  
2SK3058  
PACKAGE DRAWINGS (Unit : mm)  
1)TO-220AB (MP-25)  
2)TO-262 (MP-25 Fin Cut)  
4.8 MAX.  
1.3±0.2  
4.8 MAX.  
1.3±0.2  
10.6 MAX.  
(10)  
4
φ
3.6±0.2  
10.0  
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
2.8±0.2  
1.Gate  
2.Drain  
2.54 TYP.  
3.Source  
4.Fin (Drain)  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
3)TMD (MP-25Z)Note  
★
3)TO-263 (MP-25ZJ)  
4.8 MAX.  
4.8 MAX.  
(10)  
4
(10)  
1.3±0.2  
1.3±0.2  
4
1.4±0.2  
0.7±0.2  
1.4±0.2  
1.0±0.3  
0.5±0.2  
0.5±0.2  
2.54 TYP.  
2.54 TYP.  
3
2.54 TYP.  
2.54 TYP.  
3
1
2
1
2
1.Gate  
1.Gate  
2.Drain  
3.Source  
2.Drain  
3.Source  
4.Fin (Drain)  
4.Fin (Drain)  
Note This package is produced only in Jaman.  
EQUIVALENT CIRCUIT  
Drain  
Remark The diode connected between the gate and source of the transistor  
serves as a protector against ESD. When this device actually used,  
an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
7
Data Sheet D13097EJ2V0DS  
2SK3058  
•
The information in this document is current as of April, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
•
•
No part of this document may be copied or reproduced in any form or by aans without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may an this document.  
NEC does not assume any liability for infringement of patents, copyrights or othectual property rights of  
third parties by or arising from the use of NEC semiconductor products listis document or any other  
liability arising from the use of such products. No license, express, impliherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or other
•
•
•
Descriptions of circuits, software and other related information in tument are provided for illustrative  
purposes in semiconductor product operation and applicatimples. The incorporation of these  
circuits, software and information in the design of customuipment shall be done under the full  
responsibility of customer. NEC assumes no responsibiliny losses incurred by customers or third  
parties arising from the use of these circuits, software amation.  
While NEC endeavours to enhance the quality, reliabilsafety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (incdeath) to persons arising from defects in NEC  
semiconductor products, customers must iate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-faitures.  
NEC semiconductor products are classo the following three quality grades:  
"Standard", "Special" and "Specific""Specific" quality grade applies only to semiconductor products  
developed based on a customeated "quality assurance program" for a specific application. The  
recommended applications of iconductor product depend on its quality grade, as indicated below.  
Customers must check the grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computee equipment, communications equipment, test and measurement equipment, audio  
and visuipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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