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2SK3175A

型号：

2SK3175A

描述：

硅N沟道MOS场效应管高频功率放大器[ Silicon N Channel MOS FET UHF Power Amplifier ]

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

8 页

PDF大小：

79 K

下载PDF手册
2SK3175A  
Silicon N Channel MOS FET  
UHF Power Amplifier  
ADE-208-1452 (Z)  
1st. Edition  
September 2001  
Features  
•
•
High power output, High gain, High efficiency  
P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz)  
Compact package  
Outline  
RFPAK-G  
3
2
D
S
G
1
1. Drain  
2. Source  
3. Gate  
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.  
In AC testing , the part should be mounted on heat sink with thermal compound.  
2SK3175A  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
V
Note1  
Drain to source voltage  
Gate to source voltage  
Drain current  
VDSS  
60  
VGSS  
ID  
10  
V
8
A
Note2  
Drain peak current  
Channel dissipation  
Channel temperature  
Storage temperature  
Note: 1. Pin = 0 , PW ≤ 0.1 sec  
ID(pulse)  
16  
A
Note3  
Pch  
126  
W
°C  
°C  
Tch  
175  
Tstg  
–55 to +150  
2. PW ≤ 10 ms, duty cycle ≤ 50 %  
3. Value at Tc = 25°C  
Electrical Characteristics  
(Tc = 25°C)  
Item  
Symbol Min  
Typ  
—
Max  
1
Unit  
mA  
µA  
V
Test Conditions  
VDS = 60 V, VGS = 0  
VGS = 10V, VDS = 0  
ID = 1mA, VDS = 10V  
Zero gate voltage drain current  
Gate to source leak current  
Gate to source cutoff voltage  
Forward transfer admittance  
Input capacitance  
IDSS  
—
IGSS  
—
—
3
VGS(off)  
|yfs|  
Ciss  
1.0  
4.0  
—
2.2  
6.7  
165  
3.0  
—
—
Note4  
S
VDS=10V, ID = 5A  
pF  
VGS = 5V, VDS = 0  
f = 1MHz  
Reverse transfer capacitance  
Output Power  
Crss  
Pout  
—
4
—
—
pF  
W
VDG = 10V, VGS = 0  
f = 1MHz  
100  
135  
VDS = 28V, IDQ = 0.6A  
f = 860 MHz  
Pin = 7 W  
Drain Rational  
ηD  
—
65  
—
%
VDS = 28V, IDQ = 0.6A  
f = 860 MHz  
Pin = 7 W  
Note: 4. Pulse Test  
Rev.0, Aug. 2001, page 2 of 8  
2SK3175A  
Main Characteristics  
Maximum Safe Operation Area  
Power vs. Temperature Derating  
200  
150  
100  
50  
50  
20  
10  
5
2
1
0.5  
0
1
10  
20  
50  
100  
150  
200  
2
50  
(V)  
5
100  
Drain to Source Voltage  
V
Case Temperature Tc (°C)  
DS  
Typical Output Characteristics  
Typical Transfer Characteristics  
20  
16  
12  
8
20  
16  
12  
8
8 V  
10 V  
V
= 10 V  
DS  
Pulse Test  
6 V  
5 V  
Pulse Test  
4 V  
4
4
V
GS  
= 3 V  
0
0
1
2
3
4
5
6
2
4
6
8
10  
(V)  
Gate to Source Voltage  
V
(V)  
Drain to Source Voltage  
V
DS  
GS  
Rev.0, Aug. 2001, page 3 of 8  
2SK3175A  
Drain to Source Saturatioin Voltage vs.  
Drain Current  
Forward Transfer Admittance vs.  
Drain Current  
10  
5
5
2
1
2
1
0.5  
0.2  
0.1  
0.5  
0.05  
V
= 10 V  
0.2  
0.1  
DS  
Pulse Test  
V
= 10 V  
GS  
0.02  
0.01  
Pulse Test  
10 20  
0.1  
2
0.1 0.2  
0.5  
Drain Current I  
5
0.2 0.5  
1
5
10 20  
(A)  
1
2
50  
Drain Current I  
(A)  
D
D
Input Capacitance vs.  
Gate to Source Voltage  
Gate to Source Cutoff Voltage vs.  
Ambient Temperature  
170  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
165  
160  
155  
150  
V
= 0  
145  
140  
DS  
f = 1 MHz  
V
= 10 V  
25  
DS  
0
- 25  
-10  
- 6  
6 10  
50  
75  
100 125  
- 2  
2
Ambient Temperature Ta (°C)  
Gate to Source Voltage V  
GS  
(V)  
Rev.0, Aug. 2001, page 4 of 8  
2SK3175A  
Reverse Transfer Capacitance vs.  
Drain to Gate Voltage  
Output Capacitance vs.  
Drain to Source Voltage  
1000  
500  
100  
50  
V
= 0  
V
= 0  
f = 1 MHz  
GS  
f = 1 MHz  
GS  
20  
10  
5
200  
100  
50  
2
1
20  
10  
1
2
5
10 20  
50 100  
(V)  
1
2
5
10 20  
50 100  
(V)  
Drain to Gate Voltege V  
Drain to Source Voltage V  
DG  
DS  
Output Power, Drain Rational  
vs. Input Power  
Drain Rational vs. Output Power  
80  
60  
40  
20  
160  
120  
80  
80  
60  
40  
20  
Pout  
η
D
40  
0
V
= 28 V  
DS  
= 0.6 A  
V
= 28 V  
DS  
= 0.6 A  
I
DQ  
I
DQ  
f = 860 MHz  
f = 860 MHz  
0
0
1
2
3
4
5
6
7
0
150  
0
50  
75 100 125  
25  
Input power Pin (W)  
Output Power Pout (W)  
Rev.0, Aug. 2001, page 5 of 8  
2SK3175A  
Output Power, Drain Rational  
vs. Frequency  
Inter Modulation  
vs. Total Output Power  
100  
90  
140  
70  
60  
50  
40  
30  
η
D
Pout  
V
= 28 V  
=0.6A  
DS  
120  
100  
80  
I
f
DQ  
c
= 860 MHz  
80  
∆f=1MHz  
70  
IM7H  
60  
50  
40  
30  
20  
60  
IM7L  
IM5H  
IM3L  
IM5L  
38  
20  
40  
20  
0
V
I
= 28 V  
DS  
= 0.6 A  
IM3H  
42  
10  
0
DQ  
Pin = 7 W  
50  
46  
34  
30  
830  
840 850 860 870 880 890  
Total Output Power Pout-total (dBm)  
Frequency f (MHz)  
Rev.0, Aug. 2001, page 6 of 8  
2SK3175A  
Package Dimensions  
As of July, 2001  
Unit: mm  
16.8 0.5  
15.6 0.3  
C1.0  
2-R1.6  
9.6 0.3  
22.8 0.5  
26.0 0.5  
Hitachi Code  
JEDEC  
RFPAK-G  
–
JEITA  
–
Mass (reference value)  
11.0 g  
Rev.0, Aug. 2001, page 7 of 8  
2SK3175A  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
http://www.hitachisemiconductor.com/  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
16 Collyer Quay #20-00  
Singapore 049318  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://semiconductor.hitachi.com.sg  
San Jose,CA 95134  
Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen  
Postfach 201, D-85619 Feldkirchen  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 5.0  
Rev.0, Aug. 2001, page 8 of 8  
厂商 型号 描述 页数 下载

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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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