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2SK2858-T1-A

型号:

2SK2858-T1-A

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

7 页

PDF大小:

305 K

To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Elnics Corporation  
Issued by: Renesas Electronics Corporation (http://wwesas.com)  
Send any inquiries to http://www.renesas.com/inqu
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please  
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to  
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.  
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights  
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.  
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights  
of Renesas Electronics or others.  
3.  
4.  
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of  
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,  
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by  
you or third parties arising from the use of these circuits, software, or information.  
5.  
When exporting the products or technology described in this document, you should comply with the applicable export control  
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6.  
7.  
Renesas Electronics has used reasonable care in preparing the information included in this do, but Renesas Electronics  
does not warrant that such information is error free. Renesas Electronics assumes no liabitsoever for any damages  
incurred by you resulting from errors in or omissions from the information included he
Renesas Electronics products are classified according to the following three quality “Standard”, “High Quality”, and  
“Specific”. The recommended applications for each Renesas Electronics producs on the product’s quality grade, as  
indicated below. You must check the quality grade of each Renesas Electronict before using it in a particular  
application. You may not use any Renesas Electronics product for any appcategorized as “Specific” without the prior  
written consent of Renesas Electronics. Further, you may not use any Rlectronics product for any application for  
which it is not intended without the prior written consent of Renesas ics. Renesas Electronics shall not be in any way  
liable for any damages or losses incurred by you or third parties arm the use of any Renesas Electronics product for an  
application categorized as “Specific” or for which the product iended where you have failed to obtain the prior written  
consent of Renesas Electronics. The quality grade of each Rlectronics product is “Standard” unless otherwise  
expressly specified in a Renesas Electronics data sheets ooks, etc.  
“Standard”:  
Computers; office equipment; comons equipment; test and measurement equipment; audio and visual  
equipment; home electronic applmachine tools; personal electronic equipment; and industrial robots.  
“High Quality”: Transportation equipment (aues, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-  
crime systems; safety equind medical equipment not specifically designed for life support.  
“Specific”:  
Aircraft; aerospace eqsubmersible repeaters; nuclear reactor control systems; medical equipment or  
systems for life sup. artificial life support devices or systems), surgical implantations, or healthcare  
intervention (e.gn, etc.), and any other applications or purposes that pose a direct threat to human life.  
8.  
9.  
You should use the Renesas Els products described in this document within the range specified by Renesas Electronics,  
especially with respect to thum rating, operating supply voltage range, movement power voltage range, heat radiation  
characteristics, installatither product characteristics. Renesas Electronics shall have no liability for malfunctions or  
damages arising out oof Renesas Electronics products beyond such specified ranges.  
Although Renesas Elenics endeavors to improve the quality and reliability of its products, semiconductor products have  
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,  
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to  
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a  
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control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because  
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system  
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Electronics.  
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-  
owned subsidiaries.  
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.  
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2858  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
<R>  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The 2SK2858 is a switching device which can be driven directly by a  
2.5 V power source.  
2.1 0.1  
1.25 0.1  
The 2SK2858 has excellent switching characteristics, and is suitable for  
use as a high-speed switching device in digital circuits.  
2
FEATURES  
3
1
Can be driven by a 2.5 V power source  
Low gate cut-off voltage  
Marking  
ORDERING INFORMATION  
PART NUMBER  
2SK2858  
PACKAGE  
SC-70 (SSP)  
1. Source  
2. Gate  
3. Drain  
Marking: G24  
ABSOLUTE MAXIMUM RATINGS (°C)  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note  
Total Power Dissipatio
Channel Temperature  
Storage Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
30  
±20  
V
V
<R>  
EQUIVALENT CIRCUIT  
±0.1  
A
Drain  
±0.4  
A
Body  
150  
mW  
°C  
°C  
Diode  
Gate  
Tch  
150  
Tstg  
–55 to +150  
Gate  
Protection  
Diode  
Source  
Note PW 10 μs, Duty Cycle 1%  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D11706EJ4V0DS00 (4th edition)  
Date Published February 2006 NS CP(K)  
Printed in Japan  
1996, 2006  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
2SK2858  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 30 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
1
μA  
μA  
V
IGSS  
VGS = ±20 V, VDS = 0 V  
VDS = 3 V, ID = 10 μA  
VDS = 3 V, ID = 10 m A  
VGS = 2.5 V, ID = 1 m A  
VGS = 4 V, ID = 10 mA  
VGS = 10 V, ID = 10 mA  
VDS = 3 V  
±10  
1.8  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
RDS(on)3  
Ciss  
1.0  
20  
1.4  
Note  
Forward Transfer Admittance  
mS  
Note  
Drain to Source On-state Resistance  
8
4
15  
8
Ω
Ω
3
5
Ω
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
9
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Coss  
VGS = 0 V  
12  
2.1  
40  
55  
68  
64  
Crss  
f = 1 MHz  
td(on)  
VDD = 3 V, ID = 10 mA  
VGS = 4 V  
tr  
Turn-off Delay Time  
Fall Time  
td(off)  
RG = 10 Ω  
tf  
<R>  
Note Pulsed  
TEST CIRCUIT SWITCHING TIME  
D.U.T.  
R
L
90%  
V
GS  
V
GS  
%  
Wave
RG  
PG.  
V
DD  
90%  
I
D
90%  
10%  
I
D
V
0
GS  
10%  
D
0
Wave Form  
t
d(on)  
t
r
t
d(off)  
t
f
τ
t
on  
t
off  
μ
τ = 1  
s
Duty Cycle 1%  
2
Data Sheet D11706EJ4V0DS  
2SK2858  
TYPICAL CHARACTERISTICS (TA = 25°C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
180  
400  
300  
150  
120  
90  
VGS = 4 V  
3.5 V  
200  
100  
60  
3 V  
30  
2.5 V  
0
2
6
8
10  
0
30  
60  
90  
120  
150  
180  
T
A
- Ambient Temperature - ˚C  
VDS - ource Voltage - V  
FORWANSFER ADMMITTANCE Vs.  
DRAINT  
TRANSFER CHARACTERISTICS  
VDS = 3 V  
1
1000  
0  
0.1  
0.01  
0.001  
TA  
= 125˚C  
75˚C  
25˚C  
TA  
= 25˚C  
25˚C  
25˚C  
10  
1
0.0001  
75˚C  
125˚C  
0.00001  
0.000001  
0.0001  
0.001  
0.01  
0.1  
1
0  
5.0  
2.0  
3.0  
1.0  
I
D - Drain Current - A  
VGS - Gate to oltage - V  
DRAIN TCE ON-STATE  
DRAIN TO SOURCE ON-STATE  
RESISs. DRAIN CURRENT  
RESISTANCE vs. DRAIN CURRENT  
15  
10  
20  
15  
10  
VGS = 4 V  
V
GS = 2.5 V  
TA = 125˚C  
75˚C  
25˚C  
25˚C  
TA  
= 125˚C  
75˚C  
25˚C  
5
0
5
25˚C  
10  
0.0001  
0.001  
0.1  
0.001  
0.01  
- Drain Current - A  
0.01  
0.0001  
0.1  
1
I
D
- Drain Current - A  
ID  
3
Data Sheet D11706EJ4V0DS  
2SK2858  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
30  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
10  
8
V
GS = 10 V  
ID = 1 mA  
10 mA  
100 mA  
20  
10  
6
TA  
= 125˚C  
75˚C  
4
25˚C  
25˚C  
2
0
0
2  
16  
4
20  
0.1  
1
0.0001  
0.001  
0.01  
ID - Drain Current - A  
VGS - Grce Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
<R>  
NG CHARACTERISTICS  
100  
1000  
f = 1 MHz  
GS = 0 V  
V
10  
1
C
Coissss  
t
r
100  
t
tdf(on)  
C
rs
td(off)  
V
DD = 3 V  
V
GS(on) = 4V  
R
G
= 10 Ω  
0.1  
0.01  
10  
0.01  
1
0.1  
100  
0.1  
- Drain Current - A  
1
V
DS - Drain to SourcV  
I
D
SOURCE TO DRAIN FORWARD VOLTAGE  
1
0.1  
0.01  
0.001  
0.0001  
0.8  
F(S-D) - Source to Drain Voltage - V  
1.2  
1.0  
0.4  
0.6  
V
4
Data Sheet D11706EJ4V0DS  
2SK2858  
The information in this document is current as of February, 2006. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not  
all products and/or types are available in every country. Please check with an NElectronics sales  
representative for availability and additional information.  
No part of this document may be copied or reproduced in any form or by ans without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsr any errors that may  
appear in this document.  
NEC Electronics does not assume any liability for infringement of patpyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Elecroducts listed in this document  
or any other liability arising from the use of such products. No , express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual propertof NEC Electronics or others.  
Descriptions of circuits, software and other related informatis document are provided for illustrative  
purposes in semiconductor product operation and apexamples. The incorporation of these  
circuits, software and information in the design of a er's equipment shall be done under the full  
responsibility of the customer. NEC Electronics ano responsibility for any losses incurred by  
customers or third parties arising from the use of tcuits, software and information.  
While NEC Electronics endeavors to enhance ity, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the pty of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property o(including death) to persons arising from defects in NEC  
Electronics products, customers musporate sufficient safety measures in their design, such as  
redundancy, fire-containment and ae features.  
NEC Electronics products are cinto the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grades only to NEC Electronics products developed based on a customer-  
designated "quality assuogram" for a specific application. The recommended applications of an NEC  
Electronics product deits quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electroniuct before using it in a particular application.  
"Standard": Com, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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