Advanced Technical Information
NPT3 IGBT
in miniBLOC package
IXEN 60N120
IXEN 60N120D1
IC25
VCES
VCE(sat)typ. = 2.1 V
= 100 A
= 1200 V
C
E
C
miniBLOC, SOT-227 B
E
E153432
G
G
G
E
C = Collector
E
G = Gate
E = Emitter *
IXEN 60N120
IXEN 60N120D1
C
*EitherEmitterterminalcanbeusedasMainorKelvinEmitter
Features
IGBT
• NPT3 IGBT
Symbol
VCES
Conditions
Maximum Ratings
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
TVJ = 25°C to 150°C
1200
V
V
±
VGES
20
IC25
IC90
TC = 25°C
TC = 90°C
100
65
A
A
• miniBLOC package
±
- isolated copper base plate
- screw terminals
- kelvin emitter terminal for easy drive
- industry standard outline
ICM
VCEK
VGE = 15 V; RG = 22 Ω; TVJ = 125°C
100
VCES
A
µs
W
RBSOA, Clamped inductive load; L = 100 µH
±
tSC
(SCSOA)
VCE = 900 V; VGE = 15 V; RG = 22 Ω; TVJ = 125°C
non-repetitive
10
Applications
Ptot
TC = 25°C
445
• single switches
and with complementary free wheeling
diodes
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
• choppers
min.
typ. max.
• phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
VCE(sat)
IC = 60 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.1
2.5
2.7
V
V
VGE(th)
ICES
IC = 2 mA; VGE = VCE
4.5
6.5
V
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.1 mA
mA
0.1
±
IGES
VCE = 0 V; VGE
=
20 V
200 nA
td(on)
tr
td(off)
tf
Eon
Eoff
150
60
700
50
7.2
6.0
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 60 A
±
VGE = 15 V; RG = 22 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 50 A
3.8
500
nF
nC
RthJC
0.28 K/W
© 2002 IXYS All rights reserved
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IXYS Semiconductor GmbH
IXYS Corporation
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
