Advanced Technical Information
NPT3 IGBT
IXER 35N120D1
IC25
VCES
VCE(sat)typ. = 2.2 V
= 50 A
= 1200 V
with Diode
in ISOPLUS 247TM
ISOPLUS 247TM
E153432
C
G
G
C
E
Isolated Backside*
E
G = Gate
C = Collector E = Emitter
*Patent pending
Features
IGBT
• NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
V
±
VGES
20
IC25
IC90
TC = 25°C
TC = 90°C
50
32
A
A
- short tail current for optimized
performance in resonant circuits
±
ICM
VCEK
VGE = 15 V; RG = 39 Ω; TVJ = 125°C
50
VCES
A
µs
W
• HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
RBSOA, Clamped inductive load; L = 100 µH
±
tSC
(SCSOA)
VCE = 900V; VGE = 15 V; RG = 39 Ω; TVJ = 125°C
non-repetitive
10
• ISOPLUS 247TM package
- isolated back surface
- low coupling capacity between pins
and heatsink
Ptot
TC = 25°C
200
Symbol
Conditions
Characteristic Values
- high reliability
(TVJ = 25°C, unless otherwise specified)
- industry standard outline
min.
typ. max.
Applications
VCE(sat)
IC = 35 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.2
2.6
2.8
V
V
• single switches
• choppers with complementary free
wheeling diodes
• phaselegs, H bridges, three phase
bridges e.g. for
VGE(th)
ICES
IC = 1 mA; VGE = VCE
4.5
6.5
V
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.4 mA
mA
0.4
- power supplies, UPS
- AC, DC and SR drives
- induction heating
±
IGES
VCE = 0 V; VGE
=
20 V
200 nA
td(on)
tr
td(off)
tf
Eon
Eoff
150
60
700
50
4.2
3.5
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = 15 V; RG = 39 Ω
±
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 30 A
2
250
nF
nC
RthJC
RthJH
0.6 K/W
K/W
1.2
© 2002 IXYS All rights reserved
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IXYS Semiconductor GmbH
IXYS Corporation
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
