请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTC26N50P

型号：

IXTC26N50P

描述：

PolarHV功率MOSFET[ PolarHV Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

572 K

下载PDF手册
Advanced Technical Information  
PolarHVTM  
Power MOSFET  
IXTC 26N50P  
VDSS = 500  
ID25 = 13  
RDS(on) = 260 mΩ  
V
A
Electrically Isolated Tab,  
N-Channel Enhancement Mode,  
Avalanche Rated  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS220TM(IXTC)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
E153432  
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
20  
30  
V
V
VGSM  
G
ID25  
IDM  
TC = 25°C  
13  
78  
A
A
D
S
TC = 25°C, pulse width limited by TJM  
Isolated Tab  
IAR  
TC = 25°C  
26  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
40  
mJ  
J
G = Gate  
S = Source  
D = Drain  
1.0  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
Features  
TC = 25°C  
100  
W
z Silicon chip on Direct-Copper-Bond  
substrate  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
z Low drain to tab capacitance(<30pF)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
VISOL  
FC  
50/60 Hz, RMS, t = 1, leads-to-tab  
Mounting Force  
2500  
V~  
Applications  
z
11..65/2.5..15  
N/lb  
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
z
Weight  
2
g
z
z
DC choppers  
z AC motor control  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
z
Easy assembly  
Space savings  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 30 VDC, VDS = 0  
500  
V
V
z
2.5  
5.0  
z
High power density  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = IT  
260 mΩ  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
DS99227(10/04)  
© 2004 IXYS All rights reserved  
IXTC 26N50P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
ISOPLUS220 Outline  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = T , pulse test  
20  
28  
S
Ciss  
Coss  
Crss  
3600  
380  
48  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
20  
25  
58  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
96  
20  
45  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
RthJC  
RthCK  
1.25 K/W  
K/W  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
26  
A
A
V
ISM  
Repetitive  
78  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 100 V  
400  
5.0  
ns  
QRM  
µC  
Note: Test Current IT = 13A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXTC 26N50P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
30  
27  
24  
21  
18  
15  
12  
9
60  
50  
40  
30  
20  
10  
0
V
GS  
= 10V  
7V  
V
GS  
= 10V  
7V  
6V  
6V  
5.5V  
5V  
5.5V  
5V  
6
3
4.5V  
6
0
0
0
0
1
2
3
4
5
7
8
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
º
C
Value vs. Junction Temperature  
30  
27  
24  
21  
18  
15  
12  
9
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
GS  
= 10V  
7V  
V
GS  
= 10V  
6V  
5.5V  
5V  
I
= 26A  
D
I
= 13A  
D
6
0.7  
0.4  
3
4.5V  
0
2
4
6
8
10 12 14 16 18 20  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
27  
24  
21  
18  
15  
12  
9
3.4  
3
V
GS  
= 10V  
T = 125ºC  
J
2.6  
2.2  
1.8  
1.4  
1
6
T = 25ºC  
J
3
0.6  
0
5
10 15 20 25 30 35 40 45 50 55 60  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTC 26N50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T = -40ºC  
J
25ºC  
125ºC  
T = 125ºC  
J
25ºC  
-40ºC  
0
0
3.5  
4
4.5  
5
5.5  
6
6.5  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
70  
V
= 250V  
DS  
60  
50  
40  
30  
20  
10  
0
I
I
= 13A  
D
G
= 10mA  
T = 125ºC  
J
T = 25ºC  
J
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
10 20 30 40 50 60 70 80 90 100  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
10000  
1000  
100  
R
Limit  
DS(on)  
25µs  
100µs  
1ms  
C
iss  
10ms  
C
C
oss  
rss  
DC  
T
= 150ºC  
J
f = 1MHz  
10  
T
= 25ºC  
C
10  
0.1  
0
5
15  
20  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTC 26N50P  
Fig. 13. Maximum Transient Thermal Resistance  
10.00  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.195118s