IXSH 35N120B
IXST 35N120B
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
TO-247 AD Outline (IXSH)
J
min. typ. max.
I
Note 2
= I ; V = 10 V,
16
23
S
C
C90
CE
Cies
Coes
Cres
3600
260
75
pF
pF
pF
V
= 25 V, V = 0 V, f = 1 MHz
CE
GE
Qg
120
33
nC
nC
nC
Qge
Qgc
I
= I , V = 15 V, V = 0.5 V
CES
C
C90
GE
CE
49
1 = Gate
td(on)
tri
td(off)
tfi
36
27
ns
ns
Inductive load, TJ = 25°C
2 = Collector
3 = Emitter
Tab = Collector
I
= I , V = 15 V
C90 GE
C
R
V
= 5 Ω
= 0.8 V
G
160
180
300 ns
300 ns
CE
CES
Note 3
Eoff
5
9
mJ
td(on)
tri
38
29
ns
ns
Inductive load, TJ = 125°C
= I , V = 15 V
I
C
C90
GE
R
Note 3
= 5 Ω, V = 0.8 V
Eon
G
CE CES
2.5
mJ
td(off)
tfi
240
340
ns
ns
Eoff
9
mJ
TO-268 Outline (IXST)
RthJC
RthCK
0.42 K/W
K/W
(TO-247)
0.25
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for V (Clamp) > 0.8 V , higher T or
increased R .
CE
CES
J
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
G
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
13.6
e
H
L
5.45 BSC
18.70 19.10
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
1.20
1.40
.047 .055
L2
L3
L4
1.00
0.25 BSC
3.80 4.10
1.15
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
