Advance Technical Information
IXTH 16P20
VDSS = -200 V
ID25 = -16 A
RDS(on) = 0.22 Ω
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
TestConditions
Maximum Ratings
TO-247 AD
VDSS
VDGR
TJ = 25°C to 150°C
-200
-200
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
D (TAB)
VGSM
ID25
IDM
IAR
TC = 25°C
-16
-64
-16
A
A
A
TC = 25°C, pulse width limited by TJ
TC = 25°C
G = Gate,
S = Source,
D=Drain,
TAB = Drain
EAR
PD
TC = 25°C
TC = 25°C
30
mJ
W
180
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
• International standard package
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
-55 ... +150
TL
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
Md
Mountingtorque
1.13/10 Nm/lb.in.
Weight
6
g
• Low package inductance (<5 nH)
- easy to drive and to protect
Applications
Symbol
VDSS
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
• High side switching
• Push-pull amplifiers
• DC choppers
min. typ. max.
VGS = 0 V, ID = -250 µA
-200
-3.0
V
• Automatic test equipment
VGS(th)
IGSS
VDS = VGS, ID = -250 µA
VGS = ±20 VDC, VDS = 0
-5.0
±100
-25
V
nA
µA
Advantages
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Space savings
IDSS
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
-1 mA
RDS(on)
VGS = -10 V, ID = 0.5 ID25
0.22
Ω
• High power density
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98906 (2/02)
