MegaMOSTMFET
IXTH 14N80 VDSS = 800 V
ID25 = 14 A
RDS(on) = 0.70 Ω
N-ChannelEnhancementMode
Symbol
Test Conditions
MaximumRatings
TO-247 AD
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
VGSM
D(TAB)
ID25
IDM
TC = 25°C
14
56
A
A
TC = 25°C, pulse width limited by TJM
PD
TC = 25°C
300
W
G = Gate,
D = Drain,
S = Source,
TAB = Drain
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Max.leadtemperatureforsoldering 300
1.6 mm (0.063 in) from case for 10 s
°C
Md
Mountingtorque
1.13/10 Nm/lb.in.
Features
Weight
6
g
Internationalstandardpackage
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
Symbol
Test Conditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Switch-modeandresonant-mode
powersupplies
Motorcontrol
UninterruptiblePowerSupplies(UPS)
DC choppers
VDSS
VGS = 0 V, ID = 3 mA
800
2
V
V
VGS(th)
VDS = VGS, ID = 250 µA
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 µA
Advantages
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.7
Ω
Highpowerdensity
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96518F(12/97)
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