IXTH 11N80 IXTH 13N80
IXTM 11N80 IXTM 13N80
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD (IXTH) Outline
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
8
14
S
1
2
3
Ciss
Coss
Crss
4500
310
65
pF
pF
pF
td(on)
tr
td(off)
tf
20
33
50
50
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Terminals: 1 - Gate
2 - Drain
Tab - Drain
RG = 2 Ω, (External)
63 100
32 50
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qg(on)
Qgs
145 170
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
30
55
45
80
Qgd
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
0.42 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.25
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
Symbol
IS
TestConditions
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
VGS = 0 V
11N80
13N80
11
13
A
A
ISM
Repetitive;
pulse width limited by TJM 13N80
11N80
44
52
A
A
TO-204AA (IXTM) Outline
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
800
ns
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
6.4
11.4
3.42
1.09
.250 .450
.135
.038 .043
b
.97
D
22.22
.875
e
e1
10.67 11.17
.420 .440
.205 .225
5.21
5.71
L
7.93
3.84
p1 3.84
.312
p
4.19
4.19
.151 .165
.151 .165
q
30.15 BSC
1.187 BSC
R
R1
13.33
4.77
.525
.188
s
16.64 17.14
.655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
