U421 – U426
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Gate-to-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Device Dissipation (Each Side), TA = 25oC
Total Device Dissipation, TA = 25oC
(Derate 6.0 mW/ oC to 150oC). . . . . . . . . . . . . 750 mW
Storage Temperature Range . . . . . . . . . . . . . -65oC to +150oC
(Derate 3.2 mW/ oC to 150oC). . . . . . . . . . . . . . 400mW
ELECTRICAL CHARACTERISTICS (25oC Unless otherwise noted)
ELECTRICAL CHARACTERISTICS (25oC unless otherwise noted)
U421-3
U424-6
SYMBOL
CHARACTERISTIC
UNIT
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX
STATIC
BVGSS
Gate-Source Breakdown Voltage
Gate-Gate Breakdown Voltage
-60
IG = -1µA, VDS = 0
IG = -1µA, ID = 0, IS = 0
T = +25oC
-40
-60
-40
V
BVG1G2
±40
±40
1.0
1.0
3.0
3.0
pA
nA
V
GS = -20V,
DS = 0
IGSS
Gate Reverse Current (1)
Gate Operating Current (1)
T = +125oC
T = +25oC
T = +125oC
V
.25
0.5
VDG = 10V,
IG
pA
ID = 30µA
.250
-500
-2.0
-2.9
1800
VGS (off)
VGS
Gate-Source Cutoff Voltage
Gate-Source Voltage
VDS = 10V, ID = 1nA
VDG = 10V, ID = 30µA
VDS = 10V, VGS = 0
-0.4
60
-2.0 -0.4
-1.8
V
IDSS
Saturation Drain Current
1000
60
µA
DYNAMIC
gfs
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
300
1500 300
1500
10
f = 1 kHz
gos
10
3.0
1.5
VDS = 10V,
VGS = 0
Ciss
3.0
1.5
350
3.0
70
f = 1MHz
f = 1kHz
pF
Crss
Common-Source Reverse Transfer Capacitance
Common-Source Forward Transconductance
Common-Source Output Conductance
gfs
120
350
3.0
70
120
gos
VDG = 10V,
f = 10Hz
f = 1kHz
f = 10 Hz
20
10
20
10
en
Equivalent Short Circuit Input
Noise Figure
nV/ Hz
dB
ID = 30µA
NF
1.0
1.0
R
G = 10 MΩ
U421,4
U422,5
U423,6
SYMBOL
CHARACTERISTIC
UNIT
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
MATCH
| VGS1-VGS2
|
|
Differential Gate-Source Voltage
VDG = 10V, ID = 30µA
VDG = 10V, ID = 30µA,
T
T
10
10
15
25
25
40
mV
V/ oC
dB
| VGS1-VGS2
Differential Gate-Source Voltage
Change with Temperature (2)
A = -55oC, TB = 25oC,
C = 125oC
∆T
CMRR
Common Mode Rejection Ratio (3)
ID = 30µA, VDG = 10 to 20 V
90
95
80 90
80
90
NOTES:
VDD
VGS1-VGS2
3. CMRR = 20log10
VDD = 10V.
1. Approximately doubles for every 10oC increase in TA.
[
]
2. Measured at endpoints TA, TB and TC.
4. Case lead not connected.
