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XU405

型号:

XU405

描述:

双N沟道JFET开关[ Dual N-Channel JFET Switch ]

品牌:

CALOGIC[ CALOGIC, LLC ]

页数:

2 页

PDF大小:

30 K

Dual N-Channel JFET Switch  
CORPORATION  
U401 – U406  
FEATURES  
ABSOLUTE MAXIMUM RATINGS  
(TA = 25oC unless otherwise specified)  
Minimum System Error and Calibration  
Low Drift With Temperature  
Operates From Low Power Supply Voltages  
High Output Impedance  
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 50V  
Gate Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA  
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC  
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC  
PIN CONFIGURATION  
One Side  
300mW  
Both Sides  
500mW  
Power Dissipation (TA = 85oC)  
Derate above 25oC  
2.6mW/oC  
5mW/oC  
NOTE: Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections  
of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TO-71  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
U401-6  
XU401-6  
Hermetic TO-71  
Sorted Chips in Carriers  
-55oC to +150oC  
-55oC to +150oC  
D2  
S2  
G2  
S1  
G1  
D1  
CJ2  
U401 – U406  
CORPORATION  
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)  
U401  
U402  
U403  
U404  
U405  
U406  
SYMBOL  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX  
Gate-Source  
Breakdown Voltage  
BVGSS  
-50  
-.5  
-50  
-.5  
-50  
-.5  
-50  
-.5  
-50  
-.5  
-50  
-.5  
V
VDS = 0, IG = -1µA  
Gate Reverse Current  
(Note 2)  
IGSS  
-25  
-2.5  
-2.3  
10.0  
-25  
-2.5  
-2.3  
10.0  
-25  
-2.5  
-2.3  
10.0  
-25  
-2.5  
-2.3  
10.0  
-25  
-2.5  
-2.3  
10.0  
-25  
-2.5  
-2.3  
10.0  
pA  
VDS = 0, VGS = -30V  
VDS = 15V, ID = 1nA  
VDG = 15V, ID = 200µA  
Gate-Source Cutoff  
Voltage  
VGS(off)  
VGS(on)  
IDSS  
V
Gate-Source Voltage  
(on)  
Saturation Drain  
Current (Note 3)  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
mA VDS = 10V, VGS = 0  
-15  
-10  
-15  
-10  
-15  
-10  
-15  
-10  
-15  
-10  
-15  
-10  
pA  
nA  
VDG = 15V, ID = 200µA  
A = 125oC  
DS = 0, VGS = 0,  
G = ±1µA  
Operating Gate  
Current (Note 2)  
IG  
T
V
I
Gate-Gate  
Breakdown Voltage  
BVG1-G2  
V
±50  
±50  
±50  
±50  
±50  
±50  
Common-Source  
Forward  
Transconductance  
(Note 3)  
gfs  
2000 7000 2000 7000 2000 7000 2000 7000 2000 7000 2000 7000  
VDS = 10V,  
VGS = 0  
f = 1kHz  
f = 1kHz  
f = 1MHz  
Common-Source  
Output Conductance  
gos  
20  
20  
20  
20  
20  
20  
µS  
Common-Source  
Forward  
gfs  
1000 2000 1000 2000 1000 2000 1000 2000 1000 2000 1000 2000  
Transconductance  
VDG = 15V,  
ID = 200µA  
Common-Source  
Output Conductance  
gos  
2.0  
8.0  
2.0  
8.0  
2.0  
8.0  
2.0  
8.0  
2.0  
8.0  
2.0  
8.0  
Common-Source  
Input Capacitance  
(Note 6)  
Ciss  
pF  
Common-Source  
Reverse Transfer  
Capacitance (Note 6)  
Crss  
3.0  
20  
3.0  
20  
3.0  
20  
3.0  
20  
3.0  
20  
3.0  
20  
Equivalent  
Short-Circuit Input  
Noise Voltage  
nV  
Hz  
VDS = 15V, f = 10Hz  
VGS = 0 (Note 6)  
en  
V
DG = 10 to 20V,  
Common-Mode  
Rejection Ratio  
CMRR  
95  
95  
95  
95  
90  
dB  
ID = 200µA (Note 5, 6)  
Differential  
Gate-Source Voltage  
| VGS1 VGS2  
|
5
10  
10  
10  
25  
15  
25  
20  
40  
40  
80  
mV  
VDG = 10V, ID = 200µA  
Gate-Source Voltage  
Differential Drift (Note  
4)  
T
A = -55oC  
| VGS1 VGS2  
T  
|
V
DG = 10V,  
10  
TB = +25oC  
µV/oC  
ID = 200µA  
TC = +125oC  
NOTES: 1. Per transistor.  
2. Approximately doubles for every 10oC increase in TA.  
3. Pulse test duration = 300µs; duty cycle 3%.  
4. Measured at end points TA, TB, TC.  
VDD  
5. CMRR = 20 log10  
, VDD = 10V.  
| VGS VGS  
|
2
1
6. For design reference only, not 100% tested.  
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