Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
unit: mm
1.6±0.15
0.8±0.1
0.4
0.4
■ Features
● Low gate to source leakage current, IGSS
1
● Small capacitance of Ciss, Coss, Crss
● SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
3
2
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Gate to Source voltage
Drain current
Symbol
VGDO
VGSO
ID
Ratings
−40
Unit
V
0.2±0.1
−40
V
±1
mA
mA
mW
°C
1: Source
2: Drain
3: Gate
Gate current
IG
10
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Allowable power dissipation
Channel temperature
Storage temperature
PD
125
Tch
125
Marking Symbol (Example): EB
Tstg
−55 to +125
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
200
Unit
µA
nA
V
*
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
IDSS
VDS = 10V, VGS = 0
50
IGSS
VGS = −20V, VDS = 0
IG = −10µA, VDS = 0
− 0.5
VDS
−40
Gate to Source cut-off voltage
Forward transfer admittance
VGSC
| Yfs |
V
DS = 10V, ID = 1µA
−1.3
−3
V
VDS = 10V, VGS = 0, f = 1kHz
0.05
mS
pF
pF
pF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
1
VDS = 10V, VGS = 0, f = 1MHz
0.4
0.4
* IDSS rank classification
Runk
Q
R
S
IDSS (mA)
50 to 100
EBQ
70 to 130
EBR
100 to 200
EBS
Marking Symbol
1
