请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTA64N10L2

型号：

IXTA64N10L2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

351 K

下载PDF手册
Preliminary Technical Information  
LinearL2TM  
Power MOSFET  
w/Extended FBSOA  
VDSS = 100V  
ID25 = 64A  
RDS(on) 32m  
IXTA64N10L2  
IXTP64N10L2  
IXTH64N10L2  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
TO-263  
(IXTA)  
Avalanche Rated  
G
S
D (Tab)  
TO-220  
(IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
100  
100  
V
V
G
VDGR  
D
S
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
D (Tab)  
TO-247  
(IXTH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
64  
A
A
140  
IA  
EAS  
TC = 25C  
TC = 25C  
32  
2
A
J
G
D
D (Tab)  
S
PD  
TC = 25C  
357  
W
TJ  
-55 to +150  
+150  
C  
C  
C  
G = Gate  
D
= Drain  
TJM  
Tstg  
S = Source  
Tab = Drain  
-55 to +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Designed for Linear Operation  
International Standard Packages  
Avalanche Rated  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Guaranteed FBSOA at 75C  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Solid State Circuit Breakers  
Soft Start Controls  
4.5  
Linear Amplifiers  
100 nA  
A  
Programmable Loads  
Current Regulators  
IDSS  
5
TJ = 125C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
25 A  
32 m  
RDS(on)  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100557A(11/18)  
IXTA64N10L2 IXTP64N10L2  
IXTH64N10L2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
21  
27  
33  
S
Ciss  
Coss  
Crss  
3620  
720  
pF  
pF  
pF  
235  
RGi  
Integrated Gate Input Resistor  
1.2  
td(on)  
tr  
td(off)  
tf  
14  
27  
38  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 0(External)  
Qg(on)  
Qgs  
100  
16  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
45  
RthJC  
RthCS  
0.35 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Safe Operating Area Specification  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 100V, ID = 2.15A, TC = 75°C, Tp = 5s  
215  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
64  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
256  
1.4  
trr  
IRM  
QRM  
180  
16.2  
1.46  
ns  
A
μC  
IF = 32A, -di/dt = 100A/s,  
VR = 50V, VGS = 0V  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA64N10L2 IXTP64N10L2  
IXTH64N10L2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
180  
160  
140  
120  
100  
80  
13V  
11V  
10V  
V
= 20V  
GS  
V
= 20V  
GS  
60  
50  
40  
30  
20  
10  
0
15V  
12V  
10V  
9V  
8V  
7V  
9V  
8V  
6V  
5V  
60  
7V  
6V  
40  
20  
0
0
0
0
0.5  
1
1.5  
2
2.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 32A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
V
= 20V  
GS  
60  
50  
40  
30  
20  
10  
0
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
13V  
10V  
9V  
V
= 10V  
GS  
8V  
7V  
I
= 64A  
D
I
= 32A  
D
6V  
5V  
1
2
3
4
5
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 32A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
70  
60  
50  
40  
30  
20  
10  
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
T = 125oC  
J
T = 25oC  
J
20  
40  
60  
80  
100  
120  
140  
160  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTA64N10L2 IXTP64N10L2  
IXTH64N10L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
45  
40  
35  
30  
25  
20  
15  
10  
5
T
= - 40oC  
J
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
3.0  
0.4  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
1.4  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
240  
200  
160  
120  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 50V  
DS  
I
I
= 32A  
D
G
= 10mA  
T
J
= 125oC  
T
= 25oC  
J
40  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1
f
= 1 MHz  
C
iss  
0.1  
C
oss  
0.01  
0.001  
C
rss  
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA64N10L2 IXTP64N10L2  
IXTH64N10L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25oC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75oC  
1000  
100  
10  
1000  
100  
10  
R
DS(on)  
Limit  
R
DS(on)  
Limit  
25μs  
25μs  
100μs  
100μs  
1ms  
1ms  
10ms  
100ms  
TJ = 150oC  
C = 25oC  
Single Pulse  
10ms  
TJ = 150oC  
C = 75oC  
Single Pulse  
DC  
T
100ms  
T
DC  
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_64N10L2(6R) 8-16-13  
IXTA64N10L2 IXTP64N10L2  
IXTH64N10L2  
TO-263 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.199154s