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NXH80T120L2Q0SG

型号：

NXH80T120L2Q0SG

品牌：

ONSEMI[ ONSEMI ]

页数：

15 页

PDF大小：

310 K

下载PDF手册
NXH80T120L2Q0PG,  
NXH80T120L2Q0SG  
T-Type, Neutral Point  
Clamp Module  
This high−density, integrated power module combines  
high−performance IGBTs with rugged anti−parallel diodes for sine  
wave inverter applications.  
www.onsemi.com  
Features  
80 A, 1200 V (Bridge)  
• Extremely Efficient Trench IGBT with Fieldstop Technology  
• Module Design Offers High Power Density  
• Low Inductive Layout  
50 A, 600 V (Neutral Point Clamp)  
T – Type Neutral Point Clamp  
• Q0PACK Package with Press−Fit Pins  
Typical Applications  
• Solar Inverters  
• Uninterruptable Power Supplies  
Q0PACK  
CASE 180AA  
Q0PACK  
CASE 180AB  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
BRIDGE IGBT  
SCHEMATIC  
Collector−emitter voltage  
Collector current  
V
I
1200  
65  
V
A
A
CES  
15,16  
20  
19  
L11  
T
T = 80°C  
I
C
h
L6  
17  
18  
L2  
Pulsed Collector Current, T  
Limited  
260  
pulse  
CM  
L7  
L8  
by T  
jmax  
5,14  
8,9  
10,11  
Gate−emitter voltage  
V
GE  
20  
V
7
6
13 12  
L4  
L5  
Power Dissapation per IGBT  
T = T  
P
total  
146  
W
2
1
L3  
L1  
T = 80°C  
h
j
jmax  
3,4  
Short Circuit Withstand Time  
= 15 V, V = 600 V, T ≤ 150°C  
T
SC  
10  
ms  
V
GE  
CE  
J
NEUTRAL POINT IGBT  
Collector−emitter voltage (Bridge)  
MARKING DIAGRAM  
V
I
600  
59  
V
A
A
CES  
Collector current  
@ T = 80°C  
I
C
h
XXXXXXXXXXXXXXXX  
YYWW  
Pulsed Collector Current, T  
Limited  
235  
pulse  
CM  
by T  
jmax  
YYWW = Year and Work Week Code  
Gate−emitter voltage  
V
20  
66  
V
GE  
Power Dissapation per IGBT  
T = T  
P
total  
W
T = 80°C  
h
j
jmax  
ORDERING INFORMATION  
Short Circuit Withstand Time  
= 15 V, V = 400 V, T ≤ 150°C  
T
SC  
5
ms  
See detailed ordering and shipping information in the  
dimensions section on page 13 of this data sheet.  
V
GE  
CE  
J
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
October, 2015 − Rev. 1  
NXH80T120L2Q0/D  
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
PIN ASSIGNMENTS  
12 13  
14  
15 16  
17 18  
19  
11  
10  
9
20  
8
7
6
5
4
3
2 1  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
BRIDGE DIODE  
Peak Repetitive Voltage  
V
1200  
32  
V
A
RRM  
Forward Current, DC @ T = 80°C  
I
F
C
Power Dissipation per Diode T = T  
T = 80°C  
h
P
73  
W
A
j
jmax  
total  
Nonrepetitive Peak Surge Current  
I
300  
FSM  
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)  
2
2
2
I t − value  
I t  
373.5  
A s  
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)  
NEUTRAL POINT DIODE  
Diode peak repetitive voltage  
V
600  
30  
V
A
RRM  
Forward Current, DC @ T = 80°C  
I
F
h
Power Dissipation per Diode T = T  
T = 80°C  
h
P
54  
W
A
j
jmax  
total  
Nonrepetitive Peak Surge Current  
I
500  
FSM  
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)  
2
2
2
I t − value  
I t  
1037.5  
A s  
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)  
THERMAL & SAFETY CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Maximum junction temperature range  
IGBT  
Diode  
T
J
°C  
175  
175  
Storage temperature range  
Operating Temperature under Switching conditions  
Isolation test voltage, t = 1 min, 60 Hz  
Creepage distance  
T
−40 to 150  
−40 to 150  
2500  
°C  
°C  
stg  
T
VJ OP  
V
Vac  
mm  
mm  
is  
12.7  
Clearance  
12.7  
www.onsemi.com  
2
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
HALF BRIDGE IGBT CHARACTERISTICS  
Collector−emitter breakdown voltage  
V
= 0 V, I = 500 mA  
V
(BR)CES  
1200  
1.7  
–
–
V
V
GE  
C
Collector−emitter saturation voltage  
V
= 15 V, I = 80 A, T = 25°C  
= 15 V, I = 80 A, T = 150°C  
V
2.17  
2.20  
2.8  
GE  
C
J
CE(sat)  
V
GE  
C J  
Gate−emitter threshold voltage  
Collector−emitter cutoff current  
Gate leakage current  
Turn−on delay time  
Rise time  
V
= V , I = 1.5 mA  
V
5.0  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
6.0  
–
6.5  
100  
1.2  
–
V
GE  
CE  
C
GE(TH)  
V
GE  
= 0 V, V = 1200 V  
I
mA  
mA  
ns  
CE  
CES  
V
= 20 V, V = 0 V  
I
–
GE  
CE  
GES  
T = 25°C  
t
20  
j
d(on)  
V
= 350 V, I = 56 A  
CE  
C
t
r
28  
–
V
=
15 V, R = 4 W  
GE  
G
Turn−off delay time  
Fall time  
t
280  
28  
–
d(off)  
t
f
–
Turn on switching loss  
Turn off switching loss  
Turn−on delay time  
Rise time  
E
0.670  
1.3  
–
mJ  
ns  
on  
off  
E
–
T = 150°C  
t
t
16  
–
j
d(on)  
V
= 350 V, I = 56 A  
CE  
C
t
r
30  
–
V
= 15 V, R = 4 W  
G
GE  
Turn−off delay time  
Fall time  
320  
230  
0.975  
3.00  
19940  
592  
383  
840  
0.65  
–
d(off)  
t
f
–
Turn on switching loss  
Turn off switching loss  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Gate charge total  
E
on  
E
off  
–
mJ  
pF  
–
V
=20 V. V = 0 V. f = 10 KHz  
C
–
CE  
GE  
ies  
oes  
C
–
C
R
–
res  
V
= 960 V, I = 40 A, V  
=
15 V  
Q
–
nC  
CE  
C
GE  
g
Thermal Resistance,  
chip−to−heatsink  
Thermal grease thickness ≤ 50 mm  
l = 1 W/mK  
°C/W  
q
JH  
HALF BRIDGE DIODE CHARACTERISTICS  
Forward voltage  
V
V
= 0 V, I = 50 A, T = 25°C  
V
t
1.5  
–
2.25  
2.27  
3.4  
–
V
GE  
F
J
F
= 0 V, I = 50 A, T = 150°C  
GE  
F
j
Reverse recovery time  
T = 25°C  
–
–
–
–
–
–
–
–
–
–
0.068  
3
–
–
–
–
–
–
–
–
–
–
ms  
mC  
j
rr  
V
CE  
= 350 V, I = 56 A  
C
Reverse recovery charge  
Peak reverse recovery current  
Peak rate of fall of recovery current  
Reverse recovery energy  
Reverse recovery time  
Q
rr  
V
GE  
=
15 V, R = 4 W  
G
I
105  
A
rrm  
di/dt  
1896  
0.215  
0.084  
3.6  
A/ms  
mJ  
ms  
max  
E
t
rr  
T = 150°C  
j
rr  
V
CE  
= 350 V, I = 56 A  
C
Reverse recovery charge  
Peak reverse recovery current  
Peak rate of fall of recovery current  
Reverse recovery energy  
Q
mC  
rr  
V
GE  
= 15 V, R = 4 W  
G
I
110  
A
rrm  
di/dt  
1740  
0.438  
1.38  
A/ms  
mJ  
°C/W  
max  
E
rr  
Thermal Resistance,  
chip−to−heatsink  
Thermal grease thickness ≤ 50 mm  
l = 1 W/mK  
R
q
JH  
www.onsemi.com  
3
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
NEUTRAL POINT CLAMP IGBT CHARACTERISTICS  
Collector−emitter breakdown voltage  
Collector−emitter saturation voltage  
V
= 0 V, I = 500 mA  
V
(BR)CES  
600  
1.1  
–
–
V
V
GE  
C
V
= 15 V, I = 30 A, T = 25°C  
= 15 V, I = 30 A, T = 150°C  
V
1.3  
1.3  
1.8  
GE  
C
J
CE(sat)  
V
GE  
C J  
Gate−emitter threshold voltage  
Collector−emitter cutoff current  
Gate leakage current  
Turn−on delay time  
Rise time  
V
V
= V , I = 1.2 mA  
V
5.0  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5.7  
–
6.5  
100  
0.60  
–
V
GE  
CE  
C
GE(TH)  
= 0 V, V = 600 V  
I
mA  
mA  
ns  
GE  
CE  
CES  
V
= 20 V, V = 0 V  
I
–
GE  
CE  
GES  
T = 25°C  
t
26  
j
d(on)  
V
= 350 V, I = 56 A  
CE  
C
t
r
32  
–
V
=
15 V, R = 4 W  
GE  
G
Turn−off delay time  
Fall time  
t
166  
62  
–
d(off)  
t
f
–
Turn on switching loss  
Turn off switching loss  
Turn−on delay time  
Rise time  
E
0.193  
0.719  
22  
–
mJ  
ns  
on  
off  
E
–
T = 150°C  
t
t
–
j
d(on)  
V
= 350 V, I = 56 A  
CE  
C
t
r
32  
–
V
= 15 V, R = 4 W  
G
GE  
Turn−off delay time  
Fall time  
170  
32  
–
d(off)  
t
f
–
Turn on switching loss  
Turn off switching loss  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Gate charge total  
E
on  
E
off  
0.293  
1.100  
9900  
270  
270  
390  
1.35  
–
mJ  
pF  
–
V
=20 V. V = 0 V. f = 10 KHz  
C
–
CE  
GE  
ies  
oes  
C
–
C
R
–
res  
V
= 480 V, I = 75 A, V  
=
15 V  
Q
–
nC  
CE  
C
GE  
g
Thermal Resistance,  
chip−to−heatsink  
Thermal grease thickness ≤ 50 mm  
l = 1 W/mK  
°C/W  
q
JH  
NEUTRAL POINT CLAMP DIODE CHARACTERISTICS  
Forward voltage  
V
= 0 V, I = 60 A T = 25°C  
V
t
–
–
1.7  
1.8  
2.4  
–
V
GE  
F
j
F
V
GE  
= 0 V, I = 60 A, T = 150°C  
F
j
Reverse recovery time  
T = 25°C  
–
–
–
–
–
–
–
–
–
–
0.390  
10  
–
–
–
–
–
–
–
–
–
–
ms  
mC  
j
rr  
V
CE  
= 350 V, I = 56 A  
C
Reverse recovery charge  
Peak reverse recovery current  
Peak rate of fall of recovery current  
Reverse recovery energy  
Reverse recovery time  
Q
rr  
V
GE  
=
15 V, R = 4 W  
G
I
70  
A
rrm  
di/dt  
1560  
3.60  
0.260  
8.6  
A/ms  
mJ  
ms  
max  
E
t
rr  
T = 150°C  
j
rr  
V
CE  
= 350 V, I = 56 A  
C
Reverse recovery charge  
Peak reverse recovery current  
Peak rate of fall of recovery current  
Reverse recovery energy  
Q
mC  
rr  
V
GE  
= 15 V, R = 4 W  
G
I
75  
A
rrm  
di/dt  
1480  
2.80  
1.86  
A/ms  
mJ  
°C/W  
max  
E
rr  
Thermal Resistance,  
chip−to−heatsink  
Thermal grease thickness ≤ 50 mm  
l = 1 W/mK  
R
q
JH  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
4
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
HALF BRIDGE CHARACTERISTICS  
350  
300  
250  
200  
150  
100  
350  
13 V  
20 V to 15 V  
20 V to 15 V  
300  
250  
200  
150  
100  
13 V  
11 V  
11 V  
T = 25°C  
J
T = 150°C  
J
10 V  
10 V  
9 V  
9 V  
8 V  
7 V  
50  
0
50  
0
8 V  
7 V  
0
0
0
1
2
3
4
5
0
0
0
1
2
3
4
5
V
, COLLECTOR−EMITTER VOLTAGE (V)  
V
, COLLECTOR−EMITTER VOLTAGE (V)  
CE  
CE  
Figure 1. Output Characteristics  
Figure 2. Output Characteristics  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
T = 25°C  
J
T = 150°C  
J
60  
60  
T = 150°C  
40  
J
40  
T = 25°C  
J
20  
0
20  
0
1
2
3
4
5
6
7
8
9
10 11  
1
2
3
4
5
6
7
V
GE  
, GATE−EMITTER VOLTAGE (V)  
V , FORWARD VOLTAGE (V)  
F
Figure 3. Typical Transfer Characteristics  
Figure 4. Diode Forward Characteristics  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
V
= 15 V  
GE  
V
= 15 V  
T = 150°C  
GE  
T = 150°C  
J
V
J
= 350 V  
CE  
V
= 350 V  
= 4 W  
CE  
R
G
E
E
off  
E
off  
on  
E
on  
0.5  
0
0.5  
0
10 20 30 40 50 60 70 80 90 100  
IC (A)  
5
10  
15  
20  
25  
RG (W)  
Figure 5. Typical Switching Loss vs. IC  
Figure 6. Typical Switching Loss vs. RG  
www.onsemi.com  
5
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
HALF BRIDGE CHARACTERISTICS  
1000  
1000  
T
d(off)  
V
GE  
= 15 V  
T = 150°C  
T
d(off)  
J
t
f
V
CE  
= 350 V  
I = 56 A  
C
V
= 15 V  
GE  
t
f
100  
100  
T = 150°C  
J
V
CE  
= 350 V  
R
= 4 W  
G
T
d(on)  
t
r
t
r
T
d(on)  
10  
10  
0
0
0
10 20 30 40 50 60 70  
IC (A)  
80 90 100  
0
0
0
5
10  
15  
20  
25  
25  
16  
RG (W)  
Figure 7. Typical Switching Time vs. IC  
Figure 8. Typical Switching Time vs. RG  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
V
= 15 V  
T = 150°C  
= 350 V  
= 56 A  
V
GE  
= 15 V  
GE  
T = 150°C  
J
J
V
CE  
V
CE  
= 350 V  
I
C
R
= 4 W  
G
0.1  
0
0.1  
0
10 20 30 40 50 60 70 80 90 100  
IC (A)  
5
10  
15  
20  
RG (W)  
Figure 9. Typical Reverse Recovery Energy  
Loss vs. IC  
Figure 10. Typical Reverse Recovery Energy  
Loss vs. RG  
1000  
1000  
V
= 15 V  
T = 150°C  
= 350 V  
= 56 A  
V
GE  
= 15 V  
GE  
T = 150°C  
J
J
V
CE  
V
CE  
= 350 V  
I
C
R
= 4 W  
G
100  
100  
10  
10  
10 20  
30 40 50 60 70 80 90 100  
IC (A)  
2
4
6
8
10  
12  
14  
RG (W)  
Figure 11. Typical Reverse Recovery Time vs.  
IC  
Figure 12. Typical Reverse Recovery Time vs.  
RG  
www.onsemi.com  
6
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
HALF BRIDGE CHARACTERISTICS  
7
6
5
4
3
2
7
V
= 15 V  
GE  
V
= 15 V  
GE  
6
5
4
3
2
T = 150°C  
J
T = 150°C  
J
V
CE  
= 350 V  
= 4 W  
V
CE  
= 350 V  
R
G
I = 56 A  
C
1
0
1
0
0
0
0
10 20 30  
40 50 60 70 80 90 100  
IC (A)  
0
0
0
2
4
6
8
10  
12  
14  
16  
25  
25  
RG (W)  
Figure 13. Typical Reverse Recovery Charge  
vs. IC  
Figure 14. Typical Reverse Recovery Charge  
vs. RG  
120  
100  
80  
120  
100  
80  
V
= 15 V  
V
GE  
= 15 V  
GE  
T = 150°C  
T = 150°C  
J
J
V
I
= 350 V  
V
CE  
= 350 V  
CE  
= 56 A  
R
= 4 W  
C
G
60  
60  
40  
40  
20  
0
20  
0
10 20  
30 40 50 60  
IC (A)  
70 80 90 100  
5
10  
15  
20  
RG (W)  
Figure 15. Typical Reverse Recovery Current  
vs. IC  
Figure 16. Typical Reverse Recovery Current  
vs. RG  
2500  
2000  
1500  
1000  
2500  
2000  
1500  
1000  
V
= 15 V  
V
= 15 V  
GE  
GE  
T = 150°C  
T = 150°C  
J
J
V
R
= 350 V  
V
= 350 V  
CE  
CE  
= 56 A  
= 4 W  
I
C
G
500  
0
500  
0
10 20 30 40 50 60 70 80 90 100  
IC (A)  
5
10  
15  
20  
RG (W)  
Figure 17. Typical di/dt vs. IC  
Figure 18. Typical di/dt vs. RG  
www.onsemi.com  
7
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
HALF BRIDGE CHARACTERISTICS  
1
0.1  
50%  
20%  
10%  
5%  
2%  
0.01  
0.001  
0.0001  
Single Pulse  
1E−05  
0.00001  
1E−06  
1E−04  
1E−03  
1E−02  
1E−01  
1E+00  
1E+01  
ON−PULSE WIDTH (s)  
Figure 19. IGBT Transient Thermal Impedance  
10  
1
50%  
20%  
10%  
5%  
0.1  
2%  
Single Pulse  
0.01  
0.001  
1E−06  
1E−05  
1E−04  
1E−03  
1E−02  
1E−01  
1E+00  
1E+01  
ON−PULSE WIDTH (s)  
Figure 20. Diode Transient Thermal Impedance  
www.onsemi.com  
8
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
NEUTRAL POINT CHARACTERISTICS  
350  
300  
250  
200  
150  
100  
350  
20 V to 17 V  
T = 150°C  
J
300  
250  
200  
150  
100  
15 V  
13 V  
20 V to 17 V  
T = 25°C  
J
15 V  
13 V  
11 V  
10 V  
11 V  
10 V  
9 V  
8 V  
7 V  
50  
0
50  
0
9 V  
8 V  
0
0
0
1
2
3
4
5
0
0
0
1
2
3
4
5
V
, COLLECTOR−EMITTER VOLTAGE (V)  
V
, COLLECTOR−EMITTER VOLTAGE (V)  
CE  
CE  
Figure 21. Output Characteristics  
Figure 22. Output Characteristics  
200  
180  
160  
140  
120  
100  
80  
200  
180  
T = 25°C  
160  
140  
120  
100  
80  
J
T = 150°C  
J
60  
60  
40  
T = 150°C  
40  
J
20  
0
20  
0
T = 25°C  
J
1
2
3
4
5
6
7
8
9
10 11 12 13  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
V
GE  
, GATE−EMITTER VOLTAGE (V)  
V , FORWARD VOLTAGE (V)  
F
Figure 23. Typical Transfer Characteristics  
Figure 24. Diode Forward Characteristics  
3.0  
2.5  
2.0  
1.5  
1.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
V
= 15 V  
T = 150°C  
V
= 15 V  
T = 150°C  
GE  
GE  
J
J
V
V
= 350 V  
= 350 V  
= 4 W  
CE  
CE  
R
G
E
E
E
E
off  
off  
0.5  
0
on  
0.5  
0
on  
10 20 30  
40 50 60  
IC (A)  
70 80 90 100  
5
10  
15  
20  
25  
RG (W)  
Figure 25. Typical Switching Loss vs. IC  
Figure 26. Typical Switching Loss vs. RG  
www.onsemi.com  
9
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
NEUTRAL POINT CHARACTERISTICS  
1000  
1000  
V
GE  
= 15 V  
V
= 15 V  
GE  
T = 150°C  
T = 150°C  
J
J
V
CE  
= 350 V  
V
CE  
= 350 V  
R
= 4 W  
I
C
= 56 A  
G
T
d(off)  
T
d(off)  
t
f
100  
100  
t
f
t
r
t
r
T
d(on)  
T
d(on)  
10  
10  
0
0
0
10 20  
30 40 50 60  
IC (A)  
70 80 90 100  
0
0
0
5
10  
15  
20  
25  
25  
16  
RG (W)  
Figure 27. Typical Switching Time vs. IC  
Figure 28. Typical Switching Time vs. RG  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
5.0  
4.5  
V
= 15 V  
T = 150°C  
= 350 V  
= 56 A  
V
= 15 V  
GE  
GE  
T = 150°C  
J
J
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
V
CE  
V
R
= 350 V  
CE  
I
C
= 4 W  
G
1.5  
1.0  
0.5  
0
0.5  
0
10 20  
30 40 50 60 70 80 90 100  
IC (A)  
5
10  
15  
20  
RG (W)  
Figure 29. Typical Reverse Recovery Energy  
Loss vs. IC  
Figure 30. Typical Reverse Recovery Energy  
Loss vs. RG  
1000  
1000  
100  
100  
V
= 15 V  
T = 150°C  
= 350 V  
= 56 A  
V
= 15 V  
GE  
GE  
T = 150°C  
J
J
V
V
R
= 350 V  
CE  
CE  
I
C
= 4 W  
G
10  
10  
10 20 30 40 50 60 70 80 90 100  
IC (A)  
2
4
6
8
10  
12  
14  
RG (W)  
Figure 31. Typical Reverse Recovery Time vs.  
IC  
Figure 32. Typical Reverse Recovery Time vs.  
RG  
www.onsemi.com  
10  
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
NEUTRAL POINT CHARACTERISTICS  
10  
9
10  
9
8
8
7
7
6
6
5
5
4
4
V
GE  
= 15 V  
V
GE  
= 15 V  
3
3
T = 150°C  
J
J
2
2
V
CE  
= 350 V  
1
0
I
= 56 A  
1
0
R
= 4 W  
C
G
0
0
0
10 20  
30 40 50 60 70 80 90 100  
IC (A)  
0
0
0
2
4
6
8
10  
12  
14  
16  
16  
25  
RG (W)  
Figure 33. Typical Reverse Recovery Charge  
vs. IC  
Figure 34. Typical Reverse Recovery Charge  
vs. RG  
120  
100  
80  
120  
100  
80  
V
= 15 V  
V
GE  
= 15 V  
GE  
T = 150°C  
T = 150°C  
J
J
V
I
= 350 V  
V
CE  
= 350 V  
CE  
= 56 A  
R
= 4 W  
C
G
60  
60  
40  
40  
20  
0
20  
0
10 20 30  
40 50 60 70 80 90 100  
IC (A)  
2
4
6
8
10  
12  
14  
RG (W)  
Figure 35. Typical Reverse Recovery Current  
vs. IC  
Figure 36. Typical Reverse Recovery Current  
vs. RG  
2500  
2000  
1500  
1000  
2500  
2000  
1500  
1000  
V
= 15 V  
V
GE  
= 15 V  
GE  
T = 150°C  
V
T = 150°C  
J
J
= 350 V  
V
CE  
= 350 V  
= 4 W  
CE  
I
C
= 56 A  
R
G
500  
0
500  
0
10 20 30 40 50 60 70 80 90 100  
IC (A)  
5
10  
15  
20  
RG (W)  
Figure 37. Typical di/dt vs. IC  
Figure 38. Typical di/dt vs. RG  
www.onsemi.com  
11  
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
NEUTRAL POINT CHARACTERISTICS  
10  
1
50%  
20%  
0.1 10%  
5%  
2%  
0.01  
0.001  
0.0001  
Single Pulse  
1E−05  
0.00001  
1E−06  
1E−04  
1E−03  
1E−02  
1E−01  
1E+00  
1E+01  
ON−PULSE WIDTH (s)  
Figure 39. IGBT Transient Thermal Impedance  
10  
1
50%  
20%  
10%  
5%  
0.1  
2%  
Single Pulse  
0.01  
0.001  
1E−06  
1E−05  
1E−04  
1E−03  
1E−02  
1E−01  
1E+00  
1E+01  
ON−PULSE WIDTH (s)  
Figure 40. Diode Transient Thermal Impedance  
www.onsemi.com  
12  
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
THERMISTOR CHARACTERISTICS  
24K  
22K  
20K  
18K  
16K  
14K  
12K  
10K  
8K  
6K  
4K  
2K  
0
25 35 45 55  
65 75 85 95 105 115 125  
TEMPERATURE (°C)  
Figure 41. Thermistor Characteristics  
ORDERING INFORMATION  
Orderable Part Number  
Package  
Shipping  
Q0PACK − Case 180AA  
(Pb−Free and Halide−Free)  
NXH80T120L2Q0PG (Press Fit Pin)  
NXH80T120L2Q0SG (Solder Pin)  
24 Units / Blister Tray  
Q0PACK − Case 180AB  
(Pb−Free and Halide−Free)  
24 Units / Blister Tray  
www.onsemi.com  
13  
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
PACKAGE DIMENSIONS  
PIM20, 55x32.5 / Q0PACK  
CASE 180AA  
ISSUE O  
www.onsemi.com  
14  
NXH80T120L2Q0PG, NXH80T120L2Q0SG  
PACKAGE DIMENSIONS  
PIM20, 55x32.5 / Q0PACK  
CASE 180AB  
ISSUE O  
ON Semiconductor and the  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed  
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation  
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets  
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,  
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which  
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or  
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable  
copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
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For additional information, please contact your local  
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