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NXH80T120L2Q0S2G

型号：

NXH80T120L2Q0S2G

品牌：

ONSEMI[ ONSEMI ]

页数：

16 页

PDF大小：

662 K

下载PDF手册
NXH80T120L2Q0S2G/S2TG,  
NXH80T120L2Q0P2G  
Q0PACK Module  
The NXH80T120L2Q0S2/P2G is a power module containing a  
T−type neutral point clamped (NPC) three level inverter stage. The  
integrated field stop trench IGBTs and fast recovery diodes provide  
lower conduction losses and switching losses, enabling designers to  
achieve high efficiency and superior reliability.  
www.onsemi.com  
Features  
• Low Switching Loss  
• Low V  
CESAT  
• Compact 65.9 mm x 32.5 mm x 12 mm Package  
• Thermistor  
• Options with pre−applied thermal interface material (TIM) and  
without pre−applied TIM  
Q0PACK  
CASE 180AA  
PRESS−FIT PINS  
Q0PACK  
CASE 180AB  
SOLDERABLE PINS  
• Options with solderable pins and press−fit pins  
Typical Applications  
• Solar Inverter  
• Uninterruptable Power Supplies  
MARKING DIAGRAMS  
NXH80T120L2Q0P2G  
ATYYWW  
15,16  
Half Bridge  
IGBTs & Diodes  
D1  
T1  
1200V/80A  
17  
18  
NXH80T120L2Q0S2G  
ATYYWW  
D2  
T2  
D3  
5,14  
8,9,10,11  
NXH80T120L2Q0S2G = Specific Device Code  
G = Pb−free Package  
A = Assembly Site Code  
T3  
7
6
13 12  
T = Test Site Code  
YYWW = Year and Work Week Code  
Neutral Point  
IGBTs & Diodes  
600V/50A  
D4  
T4  
2
PIN ASSIGNMENTS  
1
19  
20  
3,4  
NTC  
12 13 14  
15 16  
4 3  
17 18  
19  
Figure 1. Schematic Diagram  
11  
10  
9
20  
8
7 6  
5
2 1  
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
dimensions section on page 13 of this data sheet.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
July, 2018 − Rev. 2  
NXH80T120L2Q0S2G/D  
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
Table 1. MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
HALF BRIDGE IGBT  
Collector−Emitter Voltage  
Gate−Emitter Voltage  
V
1200  
20  
V
V
CES  
V
GE  
Continuous Collector Current @ T = 80°C (T = 175°C)  
I
C
67  
A
h
J
Pulsed Collector Current (T = 175°C)  
I
201  
158  
5
A
J
Cpulse  
Maximum Power Dissipation @ T = 80°C (T = 175°C)  
P
tot  
W
ms  
°C  
°C  
h
J
Short Circuit Withstand Time @ V = 15 V, V = 600 V, T v 150°C  
T
sc  
GE  
CE  
J
Minimum Operating Junction Temperature  
T
−40  
150  
JMIN  
Maximum Operating Junction Temperature  
NEUTRAL POINT IGBT  
T
JMAX  
Collector−Emitter Voltage  
V
600  
20  
V
V
CES  
Gate−Emitter Voltage  
V
GE  
Continuous Collector Current @ T = 80°C (T = 175°C)  
I
C
49  
A
h
J
Pulsed Collector Current (T = 175°C)  
I
147  
86  
A
J
Cpulse  
Maximum Power Dissipation @ T = 80°C (T = 175°C)  
P
tot  
W
ms  
°C  
°C  
h
J
Short Circuit Withstand Time @ V = 15 V, V = 400 V, T v 150°C  
T
sc  
5
GE  
CE  
J
Minimum Operating Junction Temperature  
T
−40  
150  
JMIN  
Maximum Operating Junction Temperature  
HALF BRIDGE DIODE  
T
JMAX  
Peak Repetitive Reverse Voltage  
V
1200  
28  
V
A
RRM  
Continuous Forward Current @ T = 80°C (T = 175°C)  
I
F
h
J
Repetitive Peak Forward Current (T = 175°C, t limited by T  
)
I
84  
A
J
p
Jmax  
FRM  
Maximum Power Dissipation @ T = 80°C (T = 175°C)  
P
73  
W
°C  
°C  
h
J
tot  
Minimum Operating Junction Temperature  
T
JMIN  
−40  
150  
Maximum Operating Junction Temperature  
NEUTRAL POINT DIODE  
T
JMAX  
Peak Repetitive Reverse Voltage  
V
I
600  
33  
V
A
RRM  
Continuous Forward Current @ T = 80°C (T = 175°C)  
I
F
h
J
Repetitive Peak Forward Current (T = 175°C, t limited by T  
)
99  
A
J
p
Jmax  
FRM  
Maximum Power Dissipation @ T = 80°C (T = 175°C)  
P
63  
W
°C  
°C  
h
J
tot  
Minimum Operating Junction Temperature  
T
JMIN  
−40  
150  
Maximum Operating Junction Temperature  
THERMAL PROPERTIES  
T
JMAX  
Storage Temperature range  
T
stg  
−40 to 125  
°C  
INSULATION PROPERTIES  
Isolation test voltage, t = 1 sec, 60 Hz  
Creepage distance  
V
is  
3000  
12.7  
V
RMS  
mm  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe  
Operating parameters.  
Table 2. RECOMMENDED OPERATING RANGES  
Rating  
Symbol  
Min  
Max  
Unit  
Module Operating Junction Temperature  
T
J
−40  
150  
°C  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
2
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted  
J
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
HALF BRIDGE IGBT CHARACTERISTICS  
Collector−Emitter Cutoff Current  
Collector−Emitter Saturation Voltage  
V
= 0 V, V = 1200 V  
I
CES  
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.05  
2.10  
5.45  
–
300  
2.85  
–
mA  
GE  
CE  
V
= 15 V, I = 80 A, T = 25°C  
V
V
V
GE  
C
J
CE(sat)  
V
GE  
= 15 V, I = 80 A, T = 150°C  
C J  
Gate−Emitter Threshold Voltage  
Gate Leakage Current  
Turn−on Delay Time  
V
= V , I = 1.5 mA  
6.4  
300  
–
V
GE  
CE  
C
GE(TH)  
V
= 20 V, V = 0 V  
I
GES  
nA  
ns  
GE  
CE  
T = 25°C  
t
61  
J
d(on)  
V
= 350 V, I = 60 A  
CE  
C
Rise Time  
t
r
28  
–
V
=
15V, R = 4.7 W  
GE  
G
Turn−off Delay Time  
t
205  
41  
–
d(off)  
Fall Time  
t
f
–
Turn−on Switching Loss per Pulse  
Turn off Switching Loss per Pulse  
Turn−on Delay Time  
E
550  
1100  
58  
–
mJ  
on  
off  
E
–
T = 125°C  
t
t
–
ns  
J
d(on)  
V
= 350 V, I = 60 A  
CE  
C
Rise Time  
t
r
30  
–
V
= 15 V, R = 4.7 W  
G
GE  
Turn−off Delay Time  
230  
63  
–
d(off)  
Fall Time  
t
f
–
Turn−on Switching Loss per Pulse  
Turn off Switching Loss per Pulse  
Input Capacitance  
E
on  
E
off  
720  
1700  
19400  
400  
340  
800  
0.60  
–
mJ  
–
V
CE  
= 20 V, V = 0 V, f = 10 kHz  
C
–
pF  
GE  
ies  
oes  
Output Capacitance  
C
–
Reverse Transfer Capacitance  
Total Gate Charge  
C
–
res  
V
= 600 V, I = 80 A, V = +15 V  
Q
g
–
nC  
CE  
C
GE  
Thermal Resistance − chip−to−heatsink  
Thermal grease,  
R
–
°C/W  
thJH  
Thickness = 76 mm 2%, l = 2.9 W/mK  
NEUTRAL POINT DIODE CHARACTERISTICS  
Diode Forward Voltage  
I = 60 A, T = 25°C  
V
t
–
–
–
–
–
–
–
–
–
–
–
–
–
1.7  
1.6  
2.2  
–
V
F
J
F
I = 60 A, T = 150°C  
F
J
Reverse Recovery Time  
T = 25°C  
39  
–
ns  
mC  
A
J
rr  
V
CE  
= 350 V, I = 60 A  
C
Reverse Recovery Charge  
Q
rr  
RRM  
1.1  
–
V
=
15 V, R = 4.7 W  
GE  
G
Peak Reverse Recovery Current  
Peak Rate of Fall of Recovery Current  
Reverse Recovery Energy  
I
48  
–
di/dt  
3400  
400  
78  
–
A/ms  
mJ  
E
rr  
–
Reverse Recovery Time  
T = 125°C  
t
rr  
–
ns  
J
V
CE  
= 350 V, I = 60 A  
C
Reverse Recovery Charge  
Q
2.0  
–
mC  
A
rr  
V
= 15 V, R = 4.7 W  
G
GE  
Peak Reverse Recovery Current  
Peak Rate of Fall of Recovery Current  
Reverse Recovery Energy  
I
59  
–
RRM  
di/dt  
1600  
550  
1.50  
–
A/ms  
mJ  
E
rr  
–
Thermal Resistance − chip−to−heatsink  
Thermal grease,  
Thickness = 76 mm 2%, l = 2.9 W/mK  
R
–
°C/W  
thJH  
NEUTRAL POINT IGBT CHARACTERISTICS  
Collector−Emitter Cutoff Current  
V
= 0 V, V = 600 V  
I
–
–
–
–
–
–
200  
1.75  
–
mA  
GE  
CE  
CES  
Collector−Emitter Saturation Voltage  
V
= 15 V, I = 50 A, T = 25°C  
V
V
1.40  
1.50  
5.45  
–
V
GE  
C
J
CE(sat)  
V
GE  
= 15 V, I = 50 A, T = 150°C  
C J  
Gate−Emitter Threshold Voltage  
Gate Leakage Current  
V
GE  
= V , I = 1.2 mA  
6.4  
200  
V
CE  
C
GE(TH)  
V
= 20 V, V = 0 V  
I
GES  
nA  
GE  
CE  
www.onsemi.com  
3
 
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted  
J
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
NEUTRAL POINT IGBT CHARACTERISTICS  
Turn−on Delay Time  
T = 25°C  
t
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns  
J
d(on)  
30  
19  
V
= 350 V, I = 60 A  
CE  
C
Rise Time  
t
r
V
GE  
= 15 V, R = 4.7 W  
G
Turn−off Delay Time  
Fall Time  
t
110  
23  
d(off)  
t
f
Turn−on Switching Loss per Pulse  
Turn off Switching Loss per Pulse  
Turn−on Delay Time  
Rise Time  
E
on  
mJ  
800  
480  
32  
E
off  
T = 125°C  
t
t
ns  
J
d(on)  
V
CE  
= 350 V, I = 60 A  
C
t
r
18  
V
GE  
= 15 V, R = 4.7 W  
G
Turn−off Delay Time  
Fall Time  
120  
35  
d(off)  
t
f
Turn−on Switching Loss per Pulse  
Turn off Switching Loss per Pulse  
E
on  
mJ  
1100  
E
off  
880  
9400  
280  
Input Capacitance  
V
= 20 V, V = 0 V, f = 10 kHz  
C
–
–
–
–
–
–
–
–
–
–
pF  
CE  
GE  
ies  
Output Capacitance  
C
oes  
Reverse Transfer Capacitance  
Total Gate Charge  
C
250  
res  
V
CE  
= 480 V, I = 50 A, V = +15 V  
Q
g
395  
nC  
C
GE  
Thermal Resistance − chip−to−heatsink  
Thermal grease,  
Thickness = 76 mm 2%, l = 2.9 W/mK  
R
1.10  
°C/W  
thJH  
HALF BRIDGE DIODE CHARACTERISTICS  
Diode Forward Voltage  
I = 40 A, T = 25°C  
V
t
–
–
–
–
–
–
–
–
–
–
–
–
–
2.11  
1.50  
45  
3.10  
–
V
F
J
F
I = 40 A, T = 150°C  
F
J
Reverse recovery time  
T = 25°C  
–
ns  
mC  
A
J
rr  
V
CE  
= 350 V, I = 60 A  
C
Reverse recovery charge  
Q
rr  
RRM  
2.7  
–
V
=
15 V, R = 4.7 W  
GE  
G
Peak reverse recovery current  
Peak rate of fall of recovery current  
Reverse recovery energy  
I
110  
–
di/dt  
7100  
1000  
185  
6
–
A/ms  
mJ  
E
rr  
–
Reverse recovery time  
T = 125°C  
t
rr  
–
ns  
J
V
CE  
= 350 V, I = 60 A  
C
Reverse recovery charge  
Q
–
mC  
A
rr  
V
= 15 V, R = 4.7 W  
G
GE  
Peak reverse recovery current  
Peak rate of fall of recovery current  
Reverse recovery energy  
I
150  
5900  
1900  
1.30  
–
RRM  
di/dt  
–
A/ms  
mJ  
E
rr  
–
Thermal Resistance − chip−to−heatsink  
Thermal grease,  
Thickness = 76 mm 2%, l = 2.9 W/mK  
R
–
°C/W  
thJH  
THERMISTOR CHARACTERISTICS  
Nominal resistance  
Nominal resistance  
Deviation of R25  
T = 25°C  
R
–
–
22  
1486  
–
–
–
5
–
–
–
–
kW  
W
25  
T = 100°C  
R
100  
DR/R  
−5  
–
%
Power dissipation  
Power dissipation constant  
B−value  
P
200  
2
mW  
mW/K  
K
D
–
B(25/50), tolerance 3%  
B(25/100), tolerance 3%  
–
3950  
3998  
B−value  
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
4
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode  
300  
250  
200  
150  
100  
300  
V
= 20 V to 13 V  
GE  
T = 25°C  
11 V  
J
250  
200  
150  
100  
11 V  
10 V  
V
GE  
= 20 V to 13 V  
T = 150°C  
J
10 V  
9 V  
9 V  
8 V  
7 V  
50  
0
50  
0
8 V  
7 V  
0
1
2
3
4
5
0
1
2
3
4
5
V
CE  
, COLLECTOR−EMITTER VOLTAGE (V)  
V
CE  
, COLLECTOR−EMITTER VOLTAGE (V)  
Figure 2. Typical Output Characteristics  
Figure 3. Typical Output Characteristics  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
60  
T = 150°C  
J
T = 25°C  
J
40  
T = 150°C  
T = 25°C  
J
J
20  
0
10  
0
0
3
6
9
12  
15  
0
0.5  
1.0  
1.5  
2.0  
2.5  
V
GE  
, GATE−EMITTER VOLTAGE (V)  
V , FORWARD VOLTAGE (V)  
F
Figure 4. Typical Transfer Characteristics  
Figure 5. Diode Forward Characteristics  
Figure 6. Typical Turn On Loss vs. IC  
Figure 7. Typical Turn Off Loss vs. IC  
www.onsemi.com  
5
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode  
Figure 8. Typical On Switching Times vs. IC  
Figure 9. Typical Off Switching Times vs. IC  
Figure 10. Typical On Rise Times vs. IC  
Figure 11. Typical Off Fall Times vs. IC  
Figure 12. Typical Reverse Recovery Time vs.  
IC  
Figure 13. Typical Reverse Recovery Charge  
vs. IC  
www.onsemi.com  
6
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode  
Figure 14. Typical Reverse Recovery Peak  
Current vs. IC  
Figure 15. Typical Diode Current Slope vs. IC  
16  
14  
12  
10  
8
6
4
V
= 600 V  
= 80 A  
CE  
2
0
I
C
0
200  
400  
600  
800  
1000  
Q , GATE CHARGE (nC)  
G
Figure 16. Typical Reverse Recovery Energy  
vs. IC  
Figure 17. Gate Voltage vs. Gate Charge  
www.onsemi.com  
7
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode  
1
50%  
20%  
10%  
5%  
0.1  
2%  
1%  
0.01  
Single Pulse  
0.0001  
0.001  
0.00001  
0.001  
0.01  
0.1  
1
10  
PULSE ON TIME (s)  
Figure 18. IGBT Transient Thermal Impedance  
10  
1
50%  
20%  
10%  
5%  
0.1  
2%  
1%  
Single Pulse  
0.0001  
0.01  
0.00001  
0.001  
0.01  
0.1  
1
10  
PULSE ON TIME (s)  
Figure 19. Diode Transient Thermal Impedance  
www.onsemi.com  
8
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode  
300  
250  
200  
150  
100  
300  
V
= 20 V to 15 V  
GE  
V
= 20 V to 17 V  
GE  
15 V  
13 V  
250  
200  
150  
100  
13 V  
T = 25°C  
J
T = 150°C  
J
11 V  
10 V  
11 V  
10 V  
9 V  
8 V  
7 V  
50  
0
50  
0
7 V  
9 V  
8 V  
0
1
2
3
4
5
0
1
2
3
4
5
V
CE  
, COLLECTOR−EMITTER VOLTAGE (V)  
V
CE  
, COLLECTOR−EMITTER VOLTAGE (V)  
Figure 20. Typical Output Characteristics  
Figure 21. Typical Output Characteristics  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
60  
T = 150°C  
J
T = 25°C  
J
40  
T = 150°C  
T = 25°C  
J
J
20  
0
10  
0
0
3
6
9
12  
15  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
GE  
, GATE−EMITTER VOLTAGE (V)  
V , FORWARD VOLTAGE (V)  
F
Figure 22. Typical Transfer Characteristics  
Figure 23. Diode Forward Characteristics  
Figure 24. Typical Turn On Loss vs. IC  
Figure 25. Typical Turn Off Loss vs. IC  
www.onsemi.com  
9
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode  
Figure 26. Typical On Switching Times vs. IC  
Figure 27. Typical Off Switching Times vs. IC  
Figure 28. Typical On Rise Times vs. IC  
Figure 29. Typical Off Fall Times vs. IC  
Figure 30. Typical Reverse Recovery Time vs.  
IC  
Figure 31. Typical Reverse Recovery Charge  
vs. IC  
www.onsemi.com  
10  
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode  
Figure 32. Typical Reverse Recovery Peak  
Current vs. IC  
Figure 33. Typical Diode Current Slope vs. IC  
16  
14  
12  
10  
8
6
4
V
= 480 V  
= 50 A  
CE  
2
0
I
C
0
200  
400  
600  
800  
1000  
Q , GATE CHARGE (nC)  
G
Figure 34. Typical Reverse Recovery Energy  
vs. IC  
Figure 35. Gate Voltage vs. Gate Charge  
www.onsemi.com  
11  
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode  
10  
1
50%  
20%  
10%  
5%  
0.1  
2%  
1%  
0.01  
Single Pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
PULSE ON TIME (s)  
Figure 36. IGBT Transient Thermal Impedance  
10  
1
50%  
20%  
10%  
5%  
0.1  
2%  
1%  
Single Pulse  
0.0001  
0.01  
0.00001  
0.001  
0.01  
0.1  
1
10  
PULSE ON TIME (s)  
Figure 37. Diode Transient Thermal Impedance  
www.onsemi.com  
12  
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
TYPICAL CHARACTERISTICS − Thermistor  
24K  
20K  
16K  
12K  
8K  
4K  
0
25  
45  
65  
85  
105  
125  
TEMPERATURE (°C)  
Figure 38. Thermistor Characteristics  
ORDERING INFORMATION  
Orderable Part Number  
NXH80T120L2Q0P2G  
Marking  
Package  
Shipping  
NXH80T120L2Q0P2G  
Q0PACK − Case 180AA  
(Pb−Free and Halide−Free)  
24 Units / Blister Tray  
NXH80T120L2Q0S2G  
NXH80T120L2Q0S2TG  
NXH80T120L2Q0S2G  
NXH80T120L2Q0S2TG  
Q0PACK − Case 180AB  
(Pb−Free and Halide−Free)  
24 Units / Blister Tray  
24 Units / Blister Tray  
Q0PACK − Case 180AB  
with pre−applied thermal interface material  
(TIM)  
(Pb−Free and Halide−Free)  
www.onsemi.com  
13  
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
PACKAGE DIMENSIONS  
PIM20, 55x32.5 / Q0PACK  
CASE 180AA  
ISSUE C  
www.onsemi.com  
14  
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
PACKAGE DIMENSIONS  
PIM20, 55x32.5 / Q0PACK  
CASE 180AB  
ISSUE D  
www.onsemi.com  
15  
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G  
PACKAGE DIMENSIONS  
PIM20, 55x32.5 / Q0PACK  
CASE 180AB  
ISSUE D  
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◊
NXH80T120L2Q0S2G/D  
厂商 型号 描述 页数 下载

ONSEMI

 		NXH80T120L2Q0P2G [ Q0PACK Module ] 16 页

ONSEMI

 		NXH80T120L2Q0PG [ T-Type, Neutral Point Clamp Module ] 15 页

ONSEMI

 		NXH80T120L2Q0S2TG [ Q0PACK Module ] 16 页

ONSEMI

 		NXH80T120L2Q0SG [ T-Type, Neutral Point Clamp Module ] 15 页

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