INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
2SK845
DESCRIPTION
·Drain Current –ID=5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 450V(Min)
APPLICATIONS
·high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
VALUE
450
UNIT
V
ARAMETER
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
±20
5
V
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
A
Ptot
40
W
Tj
150
℃
℃
Tstg
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.0
UNIT
℃/W
℃/W
Rth j-c
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-a
62.5
1
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