4N60K-MK
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V, ID=250μA
DS=600V, VGS=0V
VDS=600V, VGS=0V, TC=125°С
GS=30V, VDS=0V
600
V
V
10
10
μA
μA
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
V
100 nA
-100 nA
V/°С
IGSS
VGS= -30V, VDS=0V
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
ID=250μA,Referenced to 25°C
0.6
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.5
4.5
2.5
V
VGS=10 V, ID=2.2A
Ω
CISS
COSS
CRSS
477 575 pF
VDS = 25V, VGS = 0V,
Output Capacitance
50
75
pF
pF
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
5.82 11
tD(ON)
tR
tD(OFF)
tF
45
38
98
30
17.7
6
ns
ns
Turn-On Rise Time
VDD = 300V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
V
V
DS= 480V,ID= 4.0A,
GS= 10V (Note 1, 2)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
3
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R205-013.a
www.unisonic.com.tw
