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4N600T

型号:

4N600T

描述:

N沟道场效应晶体管[ N-Channel Field Effect Transistor ]

品牌:

ETC[ ETC ]

页数:

2 页

PDF大小:

39 K

Bay Linear  
Inspire the Linear Power  
N-Channel Field Effect Transistor  
4N600(3600)  
Description  
Features  
Critical DC Electrical parameters  
specified at elevated Temp.  
The Bay Linear n-channel power field effect transistors are  
produced using high cell density DMOS technology , These  
devices are particularly suited for high voltage applications  
such as automotive and other battery powered circuits where  
fast switching, low in-line power loss and resistance to  
transistors are needed.  
Rugged internal source-drain diode  
can eliminate the need for external  
Zener diode transient suppresser  
Super high density cell design for  
extremely low RDS(ON)  
The TO-220 is offered in a 3-pin is universally preferred for all  
commercial-industrial applications at power dissipation level  
to approximately to 50 watts. Also, available in a D2 surface  
mount power package with a power dissipation up to 2 Watts  
VDSS = 600V  
RDS (ON) = 1.9  
ID = 4.0A  
Ordering Information  
Device  
4N600T  
4N600S  
Package  
TO-220  
Temp.  
0 to 150°C  
0 to 150°C  
TO-263 ( D2 )  
Absolute Maximum Rating  
Symbol  
Parameter  
Max  
Unit  
Drain Current  
-Continues  
-Pulsed  
4.0  
2.5  
16  
ID (TC=25°C)  
ID (TC=100°C)  
A
Gate Source Voltage  
Total Power Dissipation @ TC =25°C  
Derate above 25°C  
Operating and Storage  
Temperature Range  
VGSV  
PD  
V
W
W/°C  
±20  
75  
0.59  
-55 to 150  
TJ  
TSTG  
°C  
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556  
www.baylinear.com  
4N600(3600)  
Electrical Characteristics (  
TC = 25°C unless otherwise specified)  
Symbol  
Parameter  
Conditions  
Min Typ  
Max  
Units  
VDS=600V  
VGS=0V  
ID=100µA, VGS=0  
VDS=VGS  
ID=250µA  
Zero Gate Voltage Drain Current  
Drain-to-Source Breakdown  
Gate Threshold Voltage  
100  
IDSS  
µA  
V
600  
2
-
-
-
V
4
VGS(TH)  
V
Static Drain Voltage  
VGS=10V, ID=2.4A  
-
1.9  
RDS(ON)  
IGSS  
Gate-to-Source Forward Leakage VGS=20V  
Gate-to-Source Reverse Leakage VGS=-20V  
100  
-100  
NA  
Forward Tranconductance  
Input Capacitance  
Output Capacitance  
Reverse Tras. Capacitance  
Turn-ON Delay Time  
Turn-ON Rise Time  
Turn-OFF Delay Time  
Turn-OFF Fall Time  
VDS=100V, ID =2.4A  
2.9  
gfs  
S
800  
110  
20  
12  
18  
CISS  
COSS  
CRSS  
tD(ON)  
tr  
pF  
pF  
pF  
VDS= 25V, VGS=0V  
F=1.0 MHZ  
VDD=300V  
ID=2.4A, RGEN=12Ω  
RD=74Ω  
NS  
53  
19  
td(off)  
tF  
Maxim Continuous Drain source Diode Forward Current  
4.0  
IS  
A
V
Drain Source Diode  
Forward Voltage  
VGS=0V  
IS=4A  
1.50  
VDS (note)  
THERMAI CHRACTERISTICS  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
5
100  
RJC  
RJC  
°C/W  
°C/W  
Note: Pulse Test: Pulse With300 µS, Duty Cycle 2.0%  
- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,  
computer simulations and/ or initial prototype evaluation.  
Advance Information  
- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are  
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.  
Preliminary Information  
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit  
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any  
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different  
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.  
LIFE SUPPORT AND NUCLEAR POLICY  
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical  
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without  
the specific written consent of Bay Linear President.  
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556  
www.baylinear.com  
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