INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
2SK633
FEATURES
·Drain Current –ID=10A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
DESCRIPTION
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
PARAMETER
VALUE
200
UNIT
V
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
±20
10
V
A
PD
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Storage Temperature
80
W
150
℃
℃
TJ
-55~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.25
62.5
UNIT
Rth j-c
℃/W
℃/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rth j-a
1
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