请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

4N60KG-TF1-T

型号：

4N60KG-TF1-T

品牌：

UTC[ Unisonic Technologies ]

页数：

7 页

PDF大小：

241 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
4N60K-MT  
Preliminary  
Power MOSFET  
4A, 600V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 4N60K-MT is a high voltage power MOSFET and is  
designed to have better characteristics, such as fast switching  
time, low gate charge, low on-state resistance and have a high  
rugged avalanche characteristics. This power MOSFET is usually  
used at high speed switching applications in power supplies, PWM  
motor controls, high efficient DC to DC converters and bridge  
circuits.  
FEATURES  
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2 A  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, high Ruggedness  
SYMBOL  
www.unisonic.com.tw  
1 of 7  
Copyright © 2015 Unisonic Technologies Co., Ltd  
QW-R502-B30.e  
4N60K-MT  
Preliminary  
Power MOSFET  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
4N60KG-TA3-T  
4N60KG-TF3-T  
4N60KG-TF1-T  
4N60KG-TF2-T  
4N60KG-TF3-T  
4N60KG-TM3-T  
4N60KG-TMS-T  
4N60KG-TMS2-T  
4N60KG-TMS4-T  
4N60KG-TN3-R  
4N60KG-TND-R  
1
2
3
S
S
S
S
S
S
S
S
S
S
S
4N60KL-TA3-T  
4N60KL-TF3-T  
4N60KL-TF1-T  
4N60KL-TF2-T  
4N60KL-TF3-T  
4N60KL-TM3-T  
4N60KL-TMS-T  
4N60KL-TMS2-T  
4N60KL-TMS4-T  
4N60KL-TN3-R  
4N60KL-TND-R  
TO-220  
TO-220F  
TO-220F1  
TO-220F2  
TO-220F3  
TO-251  
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
Tube  
Tube  
Tube  
Tube  
Tube  
Tube  
TO-251S  
TO-251S2  
TO-251S4  
TO-252  
Tube  
Tube  
Tube  
Tape Reel  
Tape Reel  
TO-252D  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
MARKING  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 7  
QW-R502-B30.e  
www.unisonic.com.tw  
4N60K-MT  
Preliminary  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
IAR  
RATINGS  
600  
±30  
4.4  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
Avalanche Current (Note 2)  
A
Continuous  
ID  
4.0  
A
Drain Current  
Pulsed (Note 2)  
Single Pulsed (Note 3)  
IDM  
16  
A
Avalanche Energy  
EAS  
210  
4.5  
mJ  
V/ns  
Peak Diode Recovery dv/dt (Note 4)  
TO-220  
dv/dt  
106  
TO-220F/TO-220F1  
TO-220F2/TO-220F3  
TO-251/TO-251S  
36  
Power Dissipation  
PD  
W
TO-251S2/TO-251S4  
TO-252/TO-252D  
50  
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
°С  
°С  
°С  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by maximum junction temperature  
3. L = 26.25mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
TO-220/TO-220F  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
TO-220F1/TO-220F2  
TO-220F3  
Junction to Ambient  
θJA  
TO-251/TO-251S  
TO-251S2/TO-251S4  
TO-252/TO-252D  
TO-220  
110  
°C/W  
1.18  
3.47  
3.4  
°C/W  
°C/W  
°C/W  
TO-220F/TO-220F1  
TO-220F3  
Junction to Case  
θJC  
TO-220F2  
TO-251/TO-251S  
TO-251S2/TO-251S4  
TO-252/TO-252D  
2.50  
°C/W  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 7  
QW-R502-B30.e  
www.unisonic.com.tw  
4N60K-MT  
Preliminary  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
BVDSS  
IDSS  
VGS=0V, ID=250μA  
VDS=600V, VGS=0V  
DS=600V, VGS=0V, TC=125°С  
VGS=30V, VDS=0V  
GS= -30V, VDS=0V  
600  
V
10  
10  
μA  
μA  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
V
Forward  
Reverse  
100 nA  
-100 nA  
V/°С  
IGSS  
V
△BVDSS/△TJ  
Breakdown Voltage Temperature Coefficient  
ON CHARACTERISTICS  
Gate Threshold Voltage  
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
ID=250μA,Referenced to 25°C  
0.6  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250μA  
2.0  
4.0  
1.79 2.5  
V
VGS=10 V, ID=2.2A  
Ω
CISS  
COSS  
CRSS  
425 575 pF  
VDS = 25V, VGS = 0V,  
Output Capacitance  
55  
6
75  
11  
pF  
pF  
f = 1MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
tD(ON)  
tR  
tD(OFF)  
tF  
45  
49  
80  
43  
20  
5.6  
4.0  
ns  
ns  
Turn-On Rise Time  
VDD = 30V, ID = 0.5A,  
RG = 25Ω (Note 1, 2)  
Turn-Off Delay Time  
ns  
Turn-Off Fall Time  
ns  
Total Gate Charge  
QG  
nC  
nC  
nC  
VDS= 50V,ID= 1.3A,  
Gate-Source Charge  
QGS  
QGD  
VGS= 10V (Note 1, 2)  
Gate-Drain Charge  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS = 0V, IS = 4.4A  
1.4  
4.4  
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
17.6  
A
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 7  
QW-R502-B30.e  
www.unisonic.com.tw  
4N60K-MT  
Preliminary  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 7  
QW-R502-B30.e  
www.unisonic.com.tw  
4N60K-MT  
Preliminary  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS (Cont.)  
VDS  
90%  
10%  
VGS  
tD(ON)  
tD(OFF)  
tF  
tR  
Switching Test Circuit  
Switching Waveforms  
VGS  
QG  
10V  
QGS  
QGD  
Charge  
Gate Charge Test Circuit  
Gate Charge Waveform  
BVDSS  
IAS  
ID(t)  
VDS(t)  
VDD  
Time  
tp  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 7  
QW-R502-B30.e  
www.unisonic.com.tw  
4N60K-MT  
Preliminary  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 7  
QW-R502-B30.e  
www.unisonic.com.tw  
厂商 型号 描述 页数 下载

UTC

 		4N60 4安培， 600伏特N沟道功率MOSFET[ 4 Amps, 600 Volts N-CHANNEL POWER MOSFET ] 8 页

ESTEK

 		4N60 4安培， 600Volts N沟道MOSFET[ 4 Amps，600Volts N-Channel MOSFET ] 5 页

UTC

 		4N60-TA3-T 4安培， 600伏特N沟道功率MOSFET[ 4 Amps, 600 Volts N-CHANNEL POWER MOSFET ] 8 页

UTC

 		4N60-TF3-T 4安培， 600伏特N沟道功率MOSFET[ 4 Amps, 600 Volts N-CHANNEL POWER MOSFET ] 8 页

ETC

 		4N600 N沟道场效应晶体管[ N-Channel Field Effect Transistor ] 2 页

ETC

 		4N600(3600) N沟道场效应晶体管[ N-Channel Field Effect Transistor ] 2 页

ETC

 		4N600S N沟道场效应晶体管[ N-Channel Field Effect Transistor ] 2 页

ETC

 		4N600T N沟道场效应晶体管[ N-Channel Field Effect Transistor ] 2 页

UTC

 		4N60G-K08-5060-R [ 4A, 600V N-CHANNEL POWER MOSFET ] 9 页

UTC

 		4N60G-S-TMS2-T [ Power Field-Effect Transistor, ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.193104s