IXTA 180N055T IXTP 180N055T
IXTQ 180N055T
Symbol
gfs
TestConditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 50A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
70
90
S
Ciss
Coss
Crss
5800
1190
138
pF
pF
pF
td(on)
tr
td(off)
tf
37
61
65
36
ns
ns
ns
ns
VGS = 10 V, VDS = 40 V, ID = 40A
RG = 5 Ω (External)
Qg(on)
Qgs
160
46
nC
nC
nC
VGS= 10 V, VDS = 30 V, ID = 90 A
Qgd
47
RthJC
RthCK
0.42 K/W
(TO-3P)
(TO-220)
0.21
0.25
K/W
K/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
Min.
typ.
Max.
VGS = 0 V
180
A
A
V
ISM
Repetitive
600
1.2
TO-220 (IXTP) Outline
VSD
IF = 50 A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25 A
80
ns
-di/dt = 100 A/µs
VR = 25 V
QRM
0.4
µC
TO-263 (IXTA) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
Pins: 1 - Gate
2 - Drain
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
