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IXTA3N120TRL

型号：

IXTA3N120TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

175 K

下载PDF手册
High Voltage  
Power MOSFET  
VDSS = 1200V  
ID25 = 3A  
RDS(on) 4.5  
IXTA3N120  
IXTP3N120  
IXTH3N120  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
Fast Intrinsic Diode  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220AB (IXTP)  
TJ = 25C to 150C  
1200  
1200  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
3
A
A
TO-247 (IXTH)  
12  
IA  
TC = 25C  
TC = 25C  
3
A
EAS  
700  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
5
V/ns  
W
G
D
S
200  
D (Tab)  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-247 & TO-220)  
10..65 / 2.2..14.6  
N/lb  
Nm/lb.in  
International Standard Packages  
High Voltage Package  
Fast Intrinsic Diode  
1.13 / 10  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Avalanche Rated  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
High Blocking Voltage  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
2.5  
Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
100 nA  
Applications  
IDSS  
25 A  
1mA  
TJ = 125C  
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
4.5  
DS98844F(0515)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTA3N120 IXTP3N120  
IXTH3N120  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
1.5  
2.6  
S
Ciss  
Coss  
Crss  
1100  
110  
40  
1350 pF  
135 pF  
60 pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
17  
15  
32  
18  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 4.7(External)  
Qg(on)  
Qgs  
42  
8
nC  
nC  
nC  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
21  
RthJC  
0.62 °C/W  
RthCS  
RthCS  
TO-220  
TO-247  
0.50  
0.21  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
TO-247 Outline  
IS  
VGS = 0V  
3
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
12  
1.5  
V
700  
ns  
IF = 3A, VGS = 0V,-di/dt = 100A/s  
VR = 100V  
Note 1: Pulse test, t 300s, duty cycle, d 2%.  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-263 Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
1. Gate  
2,4. Drain  
3. Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTA3N120 IXTP3N120  
IXTH3N120  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
7V  
GS  
6
5
4
3
2
1
0
6V  
6V  
5V  
5V  
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
V
= 10V  
GS  
GS  
6V  
I
= 3A  
D
I
= 1.5A  
D
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 1.5A Value  
vs. Drain Current  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
0
1
2
3
4
5
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTA3N120 IXTP3N120  
IXTH3N120  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
T
J
= - 40ºC  
25ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
125ºC  
0
1
2
3
4
5
6
7
8
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0.9  
40  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
9
10  
8
V
= 600V  
DS  
8
7
6
5
4
3
2
1
0
I
I
= 1.5A  
D
G
= 10mA  
6
4
T
J
= 125ºC  
T
J
= 25ºC  
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VSD - Volts  
QG - NanoCoulombs  
Fig.12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit  
C
C
10  
1
iss  
25µs  
100µs  
1ms  
oss  
10ms  
DC  
0.1  
0.01  
TJ = 150ºC  
TC = 25ºC  
C
rss  
25  
Single Pulse  
10  
0
5
10  
15  
20  
30  
35  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA3N120 IXTP3N120  
IXTH3N120  
Fig. 13. Maximum Transient Thermal Impedance  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_3N120(4U) 5-06-15-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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