IXTT2N300P3HV
IXTH2N300P3HV
Symbol
Test Conditions
Characteristic Values
TO-268HV Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
E
A
E1
L2
C2
gfs
VDS = 50V, ID = 1A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
1.8
3.0
S
3
D1
3
D
H
D2
Ciss
Coss
Crss
1890
90
pF
pF
pF
1
2
D3
2
1
A1
L4
C
e
e
b
42
RGi
7.7
PINS:
1 - Gate 2 - Source
3 - Drain
td(on)
tr
td(off)
tf
21
17
69
62
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 500V, ID = 0.5 • ID25
RG = 5 (External)
L3
A2
L
Qg(on)
Qgs
73
9
nC
nC
nC
VGS = 10V, VDS = 1.5kV, ID = 0.5 • ID25
Qgd
40
RthJC
RthCS
0.24 °C/W
°C/W
TO-247HV
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
TO-247HV Outline
IS
VGS = 0V
2.0
A
A
V
E1
E
A
R
0P
0P1
A2
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
8.0
Q
S
1.5
D1
D2
D
4
trr
400
250
1.3
ns
nC
A
IF = 1A, -di/dt = 100A/s
1
2
3
QRM
IRM
L1
A3
2X
D3
E2
E3
4X
VR = 100V, VGS = 0V
A1
L
e
b
b1
c
e1
3X
3X
Note:
1. Pulse test, t 300s, duty cycle, d 2%.
PINS:
1 - Gate 2 - Source
3, 4 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
