请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTT10P60

型号：

IXTT10P60

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

131 K

下载PDF手册
VDSS = - 600V  
ID25 = - 10A  
Power MOSFETs  
IXTT10P60  
IXTH10P60  
RDS(on)  
≤
1Ω  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 600  
- 600  
V
V
TO-247 (IXTH)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 10  
- 40  
A
A
G
D
S
D (Tab)  
IA  
TC = 25°C  
TC = 25°C  
- 10  
3
A
J
EAS  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
PD  
TC = 25°C  
300  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
International Standard Packages  
Low RDS (on) HDMOSTM Process  
Rugged Polysilicon Gate Cell Structure  
Avalanche Rated  
Low Package Inductance  
- Easy to Drive and to Protect  
z
z
z
z
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
- 600  
- 3.0  
Typ.  
Max.  
z
Easy to Mount  
Space Savings  
High Power Density  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 20V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
V
V
z
- 5.0  
±100 nA  
Applications  
IDSS  
- 25 μA  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
-1 mA  
z
z
RDS(on)  
1
Ω
z
DS98849E(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTT10P60  
IXTH10P60  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
5
10.5  
S
Ciss  
Coss  
Crss  
4665  
437  
pF  
pF  
pF  
∅ P  
1
2
3
157  
td(on)  
tr  
td(off)  
tf  
33  
27  
85  
35  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 4.7Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
135  
30  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
45  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
TO-268 Outline  
IS  
VGS = 0V  
- 10  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
- 40  
- 3.0  
V
IF = -10A, -di/dt = -100A/μs  
500  
ns  
VR = -100V, VGS = 0V  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
Note  
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT10P60  
IXTH10P60  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
-32  
-28  
-24  
-20  
-16  
-12  
-8  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VGS = -10V  
- 7V  
VGS = -10V  
- 8V  
- 7V  
- 6V  
- 5.5V  
- 6V  
- 5.5V  
- 5V  
-4  
- 5V  
0
0
-5  
-10  
-15  
-20  
-25  
-30  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = -10V  
VGS = -10V  
- 7V  
- 6V  
I D = -10A  
I D = - 5A  
- 5V  
- 4V  
-1  
-3  
-5  
-7  
-9  
-11  
-13  
-15  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 5A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-12  
-10  
-8  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
-6  
-4  
TJ = 25ºC  
-2  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-5  
-10  
-15  
-20  
-25  
-30  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTT10P60  
IXTH10P60  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-20  
-18  
-16  
-14  
-12  
-10  
-8  
24  
20  
16  
12  
8
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
-6  
-4  
4
-2  
0
0
-3.0  
-3.4  
-3.8  
-4.2  
-4.6  
-5.0  
-5.4  
-5.8  
-6.2  
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
-22  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-30  
-25  
-20  
-15  
-10  
-5  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 300V  
I D = - 5A  
I
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
0
20  
40  
60  
80  
100  
120  
140  
0
-0.5  
-1  
-1.5  
-2  
-2.5  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
10,000  
1,000  
100  
1
f = 1 MHz  
C
iss  
0.1  
0.01  
C
oss  
C
rss  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT10P60  
IXTH10P60  
Fig. 13. Forward-Bias Safe Operating Area  
@ T = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ T = 75ºC  
C
C
-
-100  
100  
R
Limit  
R
Limit  
100µs  
DS(on)  
DS(on)  
100µs  
-
-
10  
10  
1ms  
1ms  
10ms  
10ms  
-
-
1
1
100ms  
DC  
100ms  
DC  
TJ = 150ºC  
TJ = 150ºC  
TC = 25ºC  
TC = 75ºC  
Single Pulse  
Single Pulse  
-
-
0.1  
-
0.1  
-
-
-
-
-
10  
100  
1000  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_10P60(7X-L69)9-17-12  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.163388s