IXTK 120N20P
IXTQ 120N20P
TO-264 (IXTK) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
40
63
S
Ciss
Coss
Crss
6000
1300
265
pF
pF
pF
td(on)
tr
td(off)
tf
30
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 3.3 Ω (External)
100
31
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
Qg(on)
Qgs
152
40
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
75
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
RthJC
RthCS
RthCS
0.21° C/W
° C/W
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
TO-3P
0.21
0.15
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
TO-264
° C/W
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Source-Drain Diode
Characteristic Values
Q
Q1
R
R1
6.07
8.38
3.81
1.78
6.27
8.69
4.32
2.29
.239
.330
.150
.070
.247
.342
.170
.090
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
S
6.04
6.30
.238
.248
VGS = 0 V
Repetitive
120
A
A
V
TO-3P (IXTQ) Outline
ISM
300
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
QRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
180
3.0
ns
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
