2SK3019T
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise specified)
A
Parameter
Symbol
Min
30
Typ
Max
-
Unit
Drain-Source Breakdown Voltage
V
-
-
V
V
DS
V
=0V,I =10µA
D
GS
Gate-Threshold Voltage
=3V, I =100µA
V
0.8
1.5
th(GS)
V
DS
D
Gate-Source Leakage Current
=±±0V, V =0V
-
-
-
-
I
±1
1
μA
GSS
V
GS
DS
Zero Gate Voltage Drain Current
=0V, V =30V
I
µA
DSS
V
GS
DS
Drain-Source On-Resistance
8
13
V
GS
V
GS
=4V, I =10mA
R
-
-
-
Ω
D
DS(on)
=±.5V, I =1mA
D
Forward Tranconductance
=3V, I =10mA
gfs
ms
-
-
-
±0
-
V
DS
D
Input Capacitance
=5V, V =0V, f=1MHz
C
iss
13
9
V
DS
GS
Output Capacitance
=5V, V =0V, f=1MHz
-
C
oss
pF
V
DS
GS
Reverse Transfer Capacitance
=5V, V =0V, f=1MHz
C
rss
-
-
4
V
DS
GS
SWITCHING
Turn-on Time
T
-
15
-
D(on)
V
DD
=5V, R =500Ω, I =10mA, V =5V, R =10Ω
L D GS g
Rise Time
t
r
-
-
-
35
80
80
-
-
-
V =5V, R =500Ω, I =10mA, V =5V, R =10Ω
DD L D GS g
ns
T
V
=5V, R =500Ω, I =10mA, V =5V, R =10Ω
DD
L
D
GS
g
Fall Time
=5V, R =500Ω, I =10mA, V =5V, R =10Ω
t
r
V
DD
L
D
GS
g
WEITRON
http://www.weitron.com.tw
2/4
03-Jun-2011
