1SV330
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV330
Useful for VCO/TCXO
Unit: mm
•
•
•
Small Package
High Capacitance Ratio : C /C = 3.75 (typ.)
1V 4V
Low Series Resistance : r = 0.45 Ω (typ.)
s
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
10
125
V
R
Junction temperature
Storage temperature range
T
°C
°C
j
T
−55~125
stg
USC
JEDEC
JEITA
―
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I
= 1 µA
R
10
3
V
R
Reverse current
I
C
C
V
V
V
= 10 V
nA
R
R
R
R
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
17
18
19
1V
4V
Capacitance
pF
4.25
3.5
4.8
3.75
0.45
5.43
Capacitance ratio
Series resistance
C
/C
1V 4V
r
s
V
= 1 V, f = 470 MHz
0.7
Ω
R
Marking
V 9
1
2005-11-25
