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IXTP180N10T

型号：

IXTP180N10T

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

296 K

下载PDF手册
TrenchTM  
Power MOSFET  
VDSS = 100V  
ID25 = 180A  
RDS(on) 6.4m  
IXTA180N10T  
IXTP180N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
(IXTA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220  
(IXTP)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
100  
100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IL(RMS)  
IDM  
TC = 25C (Chip Capability)  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
180  
120  
450  
A
A
A
D (Tab)  
G = Gate  
D
= Drain  
S = Source Tab = Drain  
IA  
TC = 25C  
TC = 25C  
25  
A
EAS  
750  
mJ  
PD  
TC = 25C  
480  
W
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
Ultra-Low On Resistance  
Avalanche Rated  
Low Package Inductance  
- Easy to Drive and to Protect  
175C Operating Temperature  
Fast Intrinsic Diode  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Advantages  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Easy to Mount  
Space Savings  
High Power Density  
Applications  
Automotive  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
- Motor Drives  
- 42V Power Bus  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
2.5  
V
- ABS Systems  
4.5  
            100 nA  
A  
V
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
Distributed Power Architechtures  
IDSS  
5
and VRMs  
Electronic Valve Train Systems  
High Current Switching  
TJ = 150C  
VGS = 10V, ID = 25A, Notes 1& 2  
100  A  
6.4 m  
RDS(on)  
5.7  
Applications  
High Voltage Synchronous Recifier  
DS99651B(11/18)  
© 2018 IXYS CORPORATION, All rights reserved  
IXTA180N10T  
IXTP180N10T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 Outline  
A
(TJ = 25C, Unless Otherwise Specified)  
E
E1  
C2  
L1  
L2  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
70  
110  
S
D1  
D
4
H
A1  
1
2
3
Ciss  
Coss  
Crss  
6900  
923  
pF  
pF  
pF  
b
b2  
L3  
c
e
e
0.43 [11.0]  
0  
162  
0.34 [8.7]  
td(on)  
tr  
td(off)  
tf  
33  
54  
42  
31  
ns  
ns  
ns  
ns  
0.66 [16.6]  
A2  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
RG = 3.3(External)  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
Qg(on)  
Qgs  
151  
39  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
Qgd  
45  
RthJC  
RthCH  
0.31C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
180  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 25A, VGS = 0V, Note 1  
450  
TO-220 Outline  
A
E
oP  
A1  
0.95  
H1  
Q
trr  
IRM  
QRM  
72  
5.1  
0.18  
ns  
A
μC  
IF = 90A, VGS = 0V  
D2  
E1  
D
-di/dt = 100A/s, VR = 50V  
D1  
A2  
EJECTOR  
PIN  
L1  
L
3X b  
e
c
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.  
e1  
3X b2  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTA180N10T  
IXTP180N10T  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
180  
160  
140  
120  
100  
80  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
9V  
GS  
9V  
8V  
8V  
7V  
7V  
6V  
60  
40  
6V  
20  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
6
7
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 90A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
180  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
I
= 180A  
D
I
= 90A  
D
60  
40  
20  
5V  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 90A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
140  
120  
100  
80  
T = 175oC  
J
External Lead Current Limit  
V
= 10V  
15V  
GS  
60  
T
J
= 25oC  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
TC - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All rights reserved  
IXTA180N10T  
IXTP180N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
225  
200  
175  
150  
125  
100  
75  
150  
135  
120  
105  
90  
T
J
= - 40oC  
25oC  
75  
150oC  
T
J
= 150oC  
25oC  
- 40oC  
60  
45  
50  
30  
25  
15  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
0
0
1
50  
100  
150  
200  
250  
160  
100  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
V
= 50V  
250  
200  
150  
100  
50  
DS  
I
I
= 25A  
D
G
= 10mA  
T
= 150oC  
J
T
= 25oC  
J
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
20  
40  
60  
80  
100  
120  
140  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1000  
100  
10  
10,000  
1,000  
100  
100μs  
25μs  
R
DS(  
on  
Limit  
)
1ms  
10ms  
C
iss  
f
= 1 MHz  
External Lead  
Current Limit  
DC, 100ms  
C
C
oss  
rss  
1
TJ = 175oC  
TC = 25oC  
Single Pulse  
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA180N10T  
IXTP180N10T  
Fig. 14. Resistive Turn-on  
Fig. 13. Resistive Turn-on  
Rise Time vs. Drain Current  
Rise Time vs. Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
70  
60  
50  
40  
30  
20  
10  
T = 25oC  
J
R
= 3.3Ω  
  
V
= 10V  
GS  
G
V
= 50V  
DS  
R
= 3.3Ω  
  
V
= 10V  
GS  
G
I
= 50A  
D
V
= 50V  
DS  
T = 125oC  
J
I
= 25A  
D
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
24  
28  
32  
36  
40  
44  
48  
52  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Fig. 16. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Switching Times vs. Junction Temperature  
180  
160  
140  
120  
100  
80  
75  
38  
64  
t f  
td(off)  
t r  
td(on)  
70  
65  
60  
55  
50  
45  
40  
35  
30  
37  
36  
35  
34  
33  
32  
31  
30  
61  
58  
55  
52  
49  
46  
43  
40  
T = 125oC, V = 10V  
25A < I < 50A  
R
G
= 3.3Ω, V = 10V  
D
GS  
J
GS  
V
= 50V  
DS  
V
= 50V  
DS  
I
= 50A  
D
I
= 25A  
D
60  
40  
20  
I
= 25A, 50A  
65  
D
0
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Switching Times vs. Drain Current  
160  
140  
120  
100  
80  
250  
220  
190  
160  
130  
100  
70  
38  
37  
36  
35  
34  
33  
32  
31  
30  
64  
61  
58  
55  
52  
49  
46  
43  
40  
tf  
td(off)  
T = 125oC, VGS = 10V  
J
TJ = 125oC  
V
DS = 50V  
tf  
td(off)  
= 3.3Ω, VGS = 10V  
R
G
25A < I < 50A  
D
V
DS = 50V  
I
= 25A, 50A  
D
60  
T = 25oC  
J
40  
20  
40  
25  
30  
35  
40  
45  
50  
2
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
ID - Amperes  
© 2018 IXYS CORPORATION, All rights reserved  
IXTA180N10T  
IXTP180N10T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_180N10T (61)3-07-08-C  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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