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IXTH02N450HV

型号：

IXTH02N450HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

215 K

下载PDF手册
High Voltage  
Power MOSFET  
VDSS  
ID25  
RDS(on)  625  
= 4500V  
= 200mA  
IXTT02N450HV  
IXTH02N450HV  
TO-268HV (IXTT)  
N-Channel Enhancement Mode  
G
S
D (Tab)  
TO-247HV (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
4500  
4500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
200  
600  
mA  
mA  
D (Tab)  
D
PD  
TC = 25C  
113  
W
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in  
High Blocking Voltage  
High Voltage Packages  
Weight  
TO-268HV  
TO-247HV  
4
6
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
VGS(th)  
IGSS  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
4.0  
6.5  
V
Applications  
100 nA  
A  
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
IDSS  
VDS = 3.6kV, VGS = 0V  
VDS = 4.5kV  
VDS = 3.6kV  
5
10 μA  
Laser and X-Ray Generation Systems  
TJ = 125C  
15  
μA  
RDS(on)  
VGS = 10V, ID = 10mA, Note 1  
625  
DS100498C(10/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXTT02N450HV  
IXTH02N450HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-268HV Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
A
E1  
L2  
C2  
gfs  
VDS = 50V, ID = 50mA, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
90  
150  
mS  
3
D1  
3
D
H
D2  
Ciss  
Coss  
Crss  
246  
19  
pF  
pF  
pF  
1
2
D3  
2
1
A1  
L4  
C
e
e
b
5.8  
RGi  
76  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
td(on)  
tr  
td(off)  
tf  
17  
48  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 500V, ID = 0.5 • ID25  
RG = 10(External)  
L3  
A2  
L
28  
143  
Qg(on)  
Qgs  
10.6  
3.3  
nC  
nC  
nC  
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25  
Qgd  
5.5  
RthJC  
RthCS  
1.1 °C/W  
°C/W  
TO-247HV  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
200 mA  
800 mA  
TO-247HV Outline  
E1  
E
A
R
0P  
0P1  
A2  
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
Q
S
1.5  
V
D1  
D2  
D
4
IF = 200mA, -di/dt = 50A/μs, VR = 100V  
1.6  
μs  
1
2
3
L1  
A3  
2X  
D3  
E2  
E3  
4X  
A1  
L
e
b
b1  
c
e1  
3X  
3X  
Note:  
1. Pulse test, t 300s, duty cycle, d 2%.  
PINS:  
1 - Gate 2 - Source  
3, 4 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT02N450HV  
IXTH02N450HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
8V  
7V  
60  
6.5V  
6V  
40  
6.5V  
6V  
20  
0
0
0
50  
100  
150  
200  
250  
300  
350  
400  
0
20  
40  
60  
80  
100  
120  
140  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 100mA Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
200  
180  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
7V  
I
= 200mA  
D
I
= 100mA  
D
6V  
5V  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
200  
250  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 100mA Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
60  
40  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - MilliAmperes  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXTT02N450HV  
IXTH02N450HV  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
50  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
0
0
0
50  
100  
150  
200  
250  
300  
350  
400  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGS - Volts  
ID - MilliAmperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
600  
500  
400  
300  
200  
100  
0
10  
9
8
7
6
5
4
3
2
1
0
V
= 1000V  
DS  
I
I
= 100mA  
= 1mA  
D
G
T
J
= 125ºC  
T
J
= 25ºC  
0
1
2
3
4
5
6
7
8
9
10  
11  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
1,000  
100  
10  
10  
1
f
= 1 MHz  
C
C
iss  
0.1  
oss  
0.01  
C
rss  
0.001  
1
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT02N450HV  
IXTH02N450HV  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
RDS(on) Limit  
R
DS(on)  
Limit  
1ms  
1ms  
10ms  
10ms  
TJ = 150ºC  
T = 150ºC  
J
100ms  
TC = 25ºC  
T
C
= 75ºC  
DC  
DC  
Single Pulse  
Single Pulse  
100ms  
100  
1,000  
10,000  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_02N450(H5-P640)10-15-13  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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