IXTP12N65X2M
Symbol
Test Conditions
Characteristic Values
OVERMOLDED TO-220
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
(IXTP...M)
oP
gfs
VDS = 10V, ID = 6A, Note 1
Gate Input Resistance
6.6
11.0
4.0
S
RGi
Ciss
Coss
Crss
1100
830
1.5
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
2
1
3
Effective Output Capacitance
Co(er)
Co(tr)
53
pF
pF
VGS = 0V
Energy related
Time related
190
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
23
24
52
16
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 6A
V
Terminals: 1 - Gate
2 - Drain
RG = 20 (External)
3 - Source
Qg(on)
Qgs
17.7
5.5
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 6A
Qgd
5.5
RthJC
RthCS
3.10 C/W
C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
12
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
48
1.4
V
trr
QRM
IRM
270
2.5
18.5
ns
IF = 6A, -di/dt = 100A/μs
μC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
