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IXTH1910

型号：

IXTH1910

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

167 K

下载PDF手册
Preliminary Technical Information  
IXTH1910  
IXTT1910  
IXTK1910  
VDSS = 200V  
ID25 = 80A  
RDS(on) ≤ 28mΩ  
Extended FBSOA  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
200  
200  
V
V
(TAB)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-268 (IXTT)  
ID25  
ILRMS  
IDM  
TC = 25°C, limited by leads  
Lead current limit, RMS  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
80  
75  
A
A
A
A
G
S
320  
50  
IAR  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
45  
mJ  
J
TO-264 (IXTK)  
1.5  
dV/dt  
IS ≤ IDM, di/dt ≤ 100A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2Ω  
10  
V/ns  
PD  
TC = 25°C  
360  
W
G
D
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
S
D (TAB)  
TJM  
Tstg  
-55 ... +150  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-247 & TO-264)  
1.13 / 10  
Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
TO-264  
6
4
10  
g
g
g
z Guarranteed FBSOA  
z Low gate charge  
z International standard packages  
z EpoxymeetUL94V-0, flammability  
classification  
z Low RDS (on) HDMOSTM process  
z Rugged polysilicon gate cell structure  
z Avalanche energy and current rated  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
200  
2.0  
V
V
4.0  
±100 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
25 μA  
250 μA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1  
28 mΩ  
DS99960(03/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH1910 IXTT1910  
IXTK1910  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 (IXTH) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
35 45  
S
pF  
pF  
pF  
ns  
Ciss  
Coss  
Crss  
td(on)  
tr  
6160  
1170  
520  
29  
∅ P  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
Resistive Switching Times  
44  
ns  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
td(off)  
tf  
72  
ns  
e
RG = 2Ω (External)  
29  
ns  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Millimeter  
Min. Max.  
Tab - Drain  
Inches  
Min. Max.  
Qg(on)  
Qgs  
Qgd  
RthJC  
RthCH  
180  
39  
nC  
nC  
nC  
Dim.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
100  
0.35 °C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-247  
TO-264  
0.21  
0.15  
°C/W  
°C/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
L
L1  
5.20  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ.  
19.81 20.32  
4.50  
.780 .800  
.177  
(TJ = 25°C, unless otherwise specified)  
Max.  
∅P 3.55  
3.65  
.140 .144  
IS  
VGS = 0V  
80  
A
A
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Repetitive, Pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
IF= IS -di/dt=100A/μs, VR = 100V  
320  
1.5  
6.15 BSC  
V
TO-264 (IXTK) Outline  
250  
ns  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
TO-268 (IXTT) Outline  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH1910 IXTT1910  
IXTK1910  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
250  
225  
200  
175  
150  
125  
100  
75  
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
7V  
6V  
8V  
7V  
6V  
5V  
50  
5V  
2
25  
0
0
0.0  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2.2 2.4  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 40A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
I D = 80A  
I D = 40A  
6V  
5V  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 40A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
External Lead Current Limit  
TJ = 125ºC  
TJ = 25ºC  
20 40 60 80 100 120 140 160 180 200 220 240  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH1910 IXTT1910  
IXTK1910  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
220  
200  
180  
160  
140  
120  
100  
80  
VDS = 100V  
I
I
D = 40A  
G = 10mA  
TJ = 125ºC  
60  
TJ = 25ºC  
40  
20  
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
VSD - Volts  
0
20  
40  
60  
80  
100 120 140 160 180 200  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
C
iss  
oss  
C
rss  
= 1 MHz  
5
f
0.001  
0.01  
0.1  
1
10  
0
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH1910 IXTT1910  
IXTK1910  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000.0  
100.0  
10.0  
1.0  
1,000.0  
100.0  
10.0  
1.0  
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
T
= 150ºC  
T
= 150ºC  
J
J
100ms  
DC  
Single Pulse  
Single Pulse  
100ms  
DC  
0.1  
0.1  
1
10  
100  
1000  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: TK1910(80N20Q-8XQ) 02-28-08  
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