2SK545
Preliminary
JFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGDS
IG
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Drain Voltage
Gate Current
40
-40
V
10
1
mA
mA
mW
°C
Drain Current
ID
Power Dissipation
Junction Temperature
Storage Temperature
PD
125
TJ
150
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
V(BR)GDS
IGSS
TEST CONDITIONS
ID=-10µA, VDS=0V
MIN TYP MAX UNIT
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
-40
V
-500 pA
300 µA
VGS=-20V, VDS=0V
IDSS
VDS=10V, VGS=0V
30
VGS(OFF)
|yfs|
VDS=10V, ID=1µA
-1.5 -4.0
V
Forward Transfer Admittance
Input Capacitance
VGS=0V, VDS=10V, f=1.0KHz
0.05 0.13
1.7
mS
pF
pF
CISS
VGS=0V, VDS=10V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
0.7
CLASSIFICATION OF IDSS
RANK
B10
30~80
B11
B12
RANGE
60~180
150~300
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-102.b
www.unisonic.com.tw
