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IXTX20N150

型号：

IXTX20N150

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

137 K

下载PDF手册
High Voltage Power  
MOSFETs w/ Extended  
FBSOA  
VDSS  
ID25  
RDS(on) < 1Ω  
= 1500V  
= 20A  
IXTK20N150  
IXTX20N150  
N-Channel Enhancement Mode  
Avalanche Rated  
Guaranteed FBSOA  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1500  
1500  
V
V
G
D
S
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
Tab  
ID25  
IDM  
TC = 25°C  
20  
50  
A
A
PLUS247 (IXTX)  
TC = 25°C, Pulse Width Limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
10  
2.5  
5
A
J
EAS  
dv/dt  
G
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
V/ns  
D
S
Tab  
PD  
TC = 25°C  
1250  
W
TJ  
-55 to +150  
150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJM  
Tstg  
-55 to +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
z
Avalanche Rated  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z
z
z
Fast Intrinsic Diode  
Guaranteed FBSOA at 75°C  
Low Package Inductance  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, Unless Otherwise Specified)  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1500  
2.5  
V
V
z
Easy to Mount  
Space Savings  
z
4.5  
±200 nA  
IDSS  
50 µA  
Applications  
TJ = 125°C  
750 µA  
z
High Voltage Power Supplies  
Capacitor Discharge  
Pulse Circuits  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
1
Ω
z
z
DS100424B(11/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTK20N150  
IXTX20N150  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
14  
24  
S
Ciss  
Coss  
Crss  
7800  
487  
pF  
pF  
pF  
163  
td(on)  
tr  
td(off)  
tf  
35  
30  
80  
33  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Terminals: 1 - Gate  
2 - Drain  
RG = 1Ω (External)  
3 - Source  
4 - Drain  
Millimeter  
Inches  
Qg(on)  
Qgs  
215  
40  
nC  
nC  
nC  
Dim.  
Min.  
Max.  
Min.  
Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qgd  
93  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.021  
1.020  
.780  
.056  
.106  
.122  
.033  
1.030  
.786  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.15  
c
0.53  
0.83  
D
25.91 26.16  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
Safe Operating Area Specification  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
S
T
3.81  
1.78  
6.04  
1.57  
4.32  
2.29  
6.30  
1.83  
.150  
.070  
.238  
.062  
.170  
.090  
.248  
.072  
VDS = 1500V, ID = 133mA, TC = 75°C, tp = 3s 200  
W
PLUS247TM Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
20  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
80  
1.5  
trr  
QRM  
IRM  
1.1  
1.8  
32  
µs  
µC  
A
IF = 10A, -di/dt = 100A/µs  
Terminals: 1 - Gate  
2 - Drain  
VR = 100V, VGS = 0V  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Note: 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK20N150  
IXTX20N150  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
16  
14  
12  
10  
8
30  
25  
20  
15  
10  
5
VGS = 10V  
6V  
VGS = 10V  
6V  
5V  
6
4
5V  
4V  
2
4V  
0
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 10A Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.  
Drain Current  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 20A  
I D = 10A  
TJ = 25ºC  
0
4
8
12  
16  
20  
24  
28  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
28  
24  
20  
16  
12  
8
22  
20  
18  
16  
14  
12  
10  
8
TJ = 125ºC  
25ºC  
6
4
- 40ºC  
4
2
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTK20N150  
IXTX20N150  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
60  
50  
40  
30  
20  
10  
0
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
0
0
5
10  
15  
20  
25  
30  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
ID - Amperes  
VSD - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
8
100,000  
10,000  
1,000  
100  
VDS = 750V  
= 1 MHz  
f
I
D = 10A  
I G = 10mA  
C
iss  
6
C
oss  
4
C
rss  
2
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VDS - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
Fig. 11. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
100  
10  
1
100  
10  
1
RDS(on) Limit  
RDS(on) Limit  
25µs  
100µs  
1ms  
100µs  
1ms  
10ms  
10ms  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
100ms  
T
T
100ms  
DC  
DC  
0.1  
0.1  
10  
100  
1,000  
10,000  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK20N150  
IXTX20N150  
Fig. 13. Maximum Transient Thermal Impedance  
aaaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXT_20N150(9P)12-13-11  
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