IXTR16P60P
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXTR) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = - 8A, Note 1
11
18
S
Ciss
Coss
Crss
5120
445
60
pF
pF
pF
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
29
25
60
38
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = - 8A
RG = 3Ω (External)
Qg(on)
Qgs
92
27
23
nC
nC
nC
VGS = -10V, VDS = 0.5 • VDSS, ID = - 8A
Qgd
RthJC
RthCS
0.66 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
- 16
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = - 8A, VGS = 0V, Note 1
- 64
- 2.8
trr
QRM
IRM
440
7.4
- 33.6
ns
μC
A
IF = - 8A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
