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IXTH102N20T

型号：

IXTH102N20T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

139 K

下载PDF手册
Preliminary Technical Information  
TrenchTM  
Power MOSFETs  
VDSS = 200V  
ID25 = 102A  
RDS(on) 23m  
IXTQ102N20T  
IXTH102N20T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-3P(IXTQ)  
G
D
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
200  
200  
V
V
D (Tab)  
VDGR  
TO-247 (IXTH)  
VGSM  
Transient  
30  
V
ID25  
TC = 25C  
Lead Current Limit, RMS  
TC = 25C, pulse width limited by TJM  
102  
75  
A
A
A
ILRMS  
IDM  
250  
G
D
D (Tab)  
= Drain  
IA  
TC = 25C  
TC = 25C  
5
A
J
S
EAS  
1.2  
G = Gate  
D
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 175°C  
TC = 25C  
7
V/ns  
W
750  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
-55 ... +175  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Ultra-low On Resistance  
UnclampedInductiveSwitching(UIS)  
rated  
Md  
Mounting torque  
1.13 / 10  
Nm/lb.in  
Lowpackageinductance  
- easy to drive and to protect  
175COperatingTemperature  
Weight  
TO-3P  
TO-247  
5.5  
6.0  
g
g
Advantages  
Easy to mount  
Space savings  
Highpowerdensity  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
2.5  
V
V
4.5  
Automotive  
- MotorDrives  
- High Side Switch  
- 12VBattery  
200 nA  
A  
IDSS  
5
- ABS Systems  
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
250  A  
23 m  
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
HighCurrentSwitching  
RDS(on)  
18  
Applications  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS99821A(10/13)  
IXTQ102N20T  
IXTH102N20T  
Symbol  
TestConditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
55  
92  
S
Ciss  
Coss  
Crss  
6800  
pF  
pF  
pF  
P  
1
2
3
722  
126  
td(on)  
tr  
td(off)  
tf  
19  
26  
50  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
e
RG = 2.5(External)  
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
114  
34  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
31  
RthJC  
RthCH  
0.20C/W  
C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
Symbol  
TestConditions  
CharacteristicValues  
TJ = 25C unless otherwise specified)  
Min. Typ.  
Max.  
P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
102  
A
A
R
4.32  
5.49  
.170 .216  
ISM  
Repetitive, pulse width limited by TJM  
330  
TO-3P Outline  
VSD  
trr  
IF = 50A, VGS = 0V, Note 1  
1.2  
V
130  
ns  
IF = 50A, VGS = 0V, -di/dt = 100A/s  
VR = 50V  
Note: 1. Pulse test, t 300s, duty cycle, d  2%.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4 - Drain  
PRELIMANARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from a subjective evaluation of the design, based upon prior knowledge and  
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves  
the right to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
byoneormoreofthefollowingU.S.patents:  
4,835,592 4,931,844  
4,860,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,759,692  
6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975B2  
6,534,343  
6,710,405B2  
6,710,463  
6,583,505  
IXTQ102N20T  
IXTH102N20T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
240  
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
8V  
7V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
6V  
60  
40  
5V  
20  
5V  
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 51A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 102A  
D
6V  
I
= 51A  
D
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 51A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
External Lead Current Limit  
V
= 10V  
GS  
T = 175ºC  
J
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
20  
40  
60  
80  
100 120 140 160 180 200  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTQ102N20T  
IXTH102N20T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
150ºC  
T
J
= 150ºC  
25ºC  
- 40ºC  
60  
60  
40  
40  
20  
20  
0
0
3.4  
3.8  
4.2  
4.6  
5
5.4  
5.8  
6.2  
6.6  
0
20  
40  
60  
80  
100 120 140 160 180 200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 100V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
10 20 30 40 50 60 70 80 90 100 110 120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
f = 1 MHz  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTQ102N20T  
IXTH102N20T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
27  
26  
25  
24  
23  
22  
21  
27  
26  
25  
24  
23  
22  
21  
R
= 2.5  
G
V
V
= 15V  
GS  
DS  
= 100V  
T = 25ºC  
J
R
= 2.5  
G
V
V
= 15V  
GS  
DS  
= 100V  
I
= 102A  
D
I
= 51A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100 105  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
34  
26  
25  
24  
23  
22  
21  
20  
19  
26  
75  
70  
65  
60  
55  
50  
45  
40  
35  
t r  
td(on)  
- - - -  
TJ = 125ºC, V = 15V  
25  
24  
23  
22  
21  
20  
19  
18  
32  
30  
28  
26  
24  
22  
20  
GS  
V
= 100V  
DS  
I
= 51A  
D
I
= 102A, 51A  
D
I
= 102A  
D
t f  
R
td(off)  
- - - -  
= 2.5 , V = 15V  
G
GS  
V
= 100V  
DS  
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
70  
67  
64  
61  
58  
55  
52  
49  
46  
43  
40  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
160  
150  
140  
130  
120  
110  
100  
90  
t f  
R
td(off)  
- - - -  
, VGS = 15V  
t f  
td(off)  
- - - -  
TJ = 125ºC  
= 2.5  
G
T = 125ºC, VGS = 15V  
J
VDS = 100V  
VDS = 100V  
T = 25ºC  
J
I
= 51A, 102A  
D
80  
T = 25ºC  
J
70  
60  
50  
TJ = 125ºC  
40  
50 55 60 65 70 75 80 85 90 95 100 105  
ID - Amperes  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_102N20T(7W)4-13-07-A  
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