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IXTP220N075T

型号：

IXTP220N075T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

175 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTA220N075T  
IXTP220N075T  
VDSS = 75  
ID25 = 220  
RDS(on) ≤ 4.5 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
75  
75  
V
V
G
S
VGSM  
Transient  
± 20  
V
(TAB)  
ID25  
ILRMS  
IDM  
TC = 25°C  
220  
75  
600  
A
A
A
Lead Current Limit, RMS  
TO-220 (IXTP)  
TC = 25°C, pulse width limited by TJM  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
1.0  
A
J
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 3.3 Ω  
3
V/ns  
G
(TAB)  
D
S
TC = 25°C  
480  
W
G = Gate  
S = Source  
D = Drain  
TAB = Collector  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
°C ꢀUltra-low On Resistance  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
ꢀUnclamped Inductive Switching (UIS)  
rated  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
3
2.5  
g
g
Advantages  
ꢀ
Easy to mount  
ꢀ
Space savings  
ꢀ
High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
Automotive  
- Motor Drives  
- 42V Power Bus  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
75  
V
V
2.0  
4.0  
- ABS Systems  
± 200  
nA  
ꢀ
DC/DC Converters and Off-line UPS  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
ꢀ
Primary Switch for 24V and 48V  
TJ = 150°C  
250  
Systems  
High Current Switching  
ꢀ
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
3.9  
4.5 mΩ  
Applications  
DS99611 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTA220N075T  
IXTP220N075T  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXTA) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
75  
120  
S
Ciss  
Coss  
Crss  
7700  
1100  
230  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 3.3 Ω (External)  
29  
65  
55  
47  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
165  
40  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
50  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCH  
0.31°C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
Symbol  
Test Conditions  
Characteristic Values  
L1  
L2  
L3  
L4  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
220  
A
A
R
0.46  
0.74  
.018  
.029  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
600  
1.0  
TO-220 (IXTP) Outline  
V
IF = 25 A, -di/dt = 100 A/μs  
80  
ns  
VR = 40 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
PRELIMINARYTECHNICALINFORMATION  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTA220N075T  
IXTP220N075T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
220  
200  
180  
160  
140  
120  
100  
80  
300  
270  
240  
210  
180  
150  
120  
90  
V
= 10V  
V
= 10V  
GS  
GS  
8V  
7V  
8V  
7V  
6V  
5V  
6V  
60  
60  
40  
5V  
1
30  
20  
0
0
0
0.5  
1.5  
2
2.5  
3
3.5  
4
4.5  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
VDS - Volts  
1
1.1  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 110A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
220  
200  
180  
160  
140  
120  
100  
80  
2.4  
2.2  
2
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
1.8  
1.6  
1.4  
1.2  
1
I
= 220A  
D
6V  
5V  
I
= 110A  
D
60  
40  
0.8  
0.6  
20  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 110A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
140  
120  
100  
80  
2.6  
2.4  
2.2  
2
External Lead Current Limit for TO-263 (7-Lead)  
T = 175ºC  
J
V
= 10V  
GS  
1.8  
1.6  
1.4  
1.2  
1
15V - - - - -  
External Lead Current Limit for TO-3P, TO-220, & TO-263  
60  
40  
20  
T = 25ºC  
J
0.8  
0.6  
0
0
30  
60  
90  
120 150 180 210 240 270 300  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTA220N075T  
IXTP220N075T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
220  
200  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
150ºC  
60  
T
J
= 150ºC  
60  
25ºC  
- 40ºC  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80 100 120 140 160 180 200 220  
ID - Amperes  
3
0.4  
0
3.5  
4
4.5  
5
5.5  
6
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 37.5V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
= 150ºC  
J
T
J
= 25ºC  
60  
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
C
iss  
0.10  
C
C
oss  
rss  
25  
f = 1 MHz  
5
0.01  
0.0001  
10  
15  
20  
30  
35  
40  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA220N075T  
IXTP220N075T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
R
= 3.3  
Ω
G
V
V
= 10V  
GS  
DS  
T = 25ºC  
J
= 37.5V  
R
= 3.3  
Ω
G
V
V
= 10V  
GS  
DS  
= 37.5V  
I
= 50A  
D
T = 125ºC  
J
I
= 25A  
D
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
75  
220  
200  
180  
160  
140  
120  
100  
80  
48.5  
48.0  
47.5  
47.0  
46.5  
46.0  
45.5  
45.0  
44.5  
44.0  
84  
80  
76  
72  
68  
64  
60  
56  
52  
48  
t r  
TJ = 125ºC, VGS = 10V  
DS = 37.5V  
td(on)  
- - - -  
t f  
R
td(off)  
- - - -  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
= 3.3 , V = 10V  
Ω
GS  
G
V
V
= 37.5V  
DS  
I
= 25A  
D
I
= 50A  
D
ID = 25A  
I
= 50A  
D
60  
40  
20  
2
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
49  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
210  
190  
170  
150  
130  
110  
90  
340  
310  
280  
250  
220  
190  
160  
130  
100  
70  
tf  
R
td(off)  
- - - -  
t f  
td(off)  
- - - -  
= 3.3 , VGS = 10V  
Ω
G
T = 125ºC, VGS = 10V  
J
48  
47  
46  
45  
44  
VDS = 37.5V  
VDS = 37.5V  
I
= 25A  
D
TJ = 125ºC  
I
= 50A  
D
70  
T = 25ºC  
J
50  
30  
2
4
6
8
10  
12  
14  
16  
18  
20  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
RG - Ohms  
IXYS REF: T_220N075T (61) 11-20-06-B.xls  
© 2006 IXYS CORPORATION All rights reserved  
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