IXTC280N055T
Symbol
gfs
Test Conditions
Characteristic Values
ISOPLUS220 (IXTC) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 60 A, Note 1
65
108
S
Ciss
Coss
Crss
9800
1450
320
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
32
55
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A
RG = 3.3 Ω (External)
49
37
ns
ns
1.Gate 2. Drain
3.Source
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1,2, and 3.
Qg(on)
Qgs
200
50
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
50
RthJC
RthCS
0.96°C/W
°C/W
0.5
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
280
A
A
ISM
VSD
trr
Pulse width limited by TJM
IF = 50 A, VGS = 0 V, Note 1
600
1.0
V
IF = 25 A, -di/dt = 100 A/μs
30
ns
VR = 30 V, VGS = 0 V
Notes: 1. Pulse test: t ≤ 300 μs, duty cycle d ≤ 2 %;
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6771478 B2 7,071,537
