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IXTA7N60P

型号：

IXTA7N60P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

120 K

下载PDF手册
Advance Technical Information  
PolarHVTM  
Power MOSFET  
VDSS = 600  
ID25  
RDS(on) ≤ 1.1  
V
A
Ω
IXTA 7N60P  
IXTP 7N60P  
=
7
N-Channel Enhancement Mode  
Symbol  
TestConditions  
Maximum Ratings  
TO-220 (IXTP)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
600  
600  
V
V
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
7
14  
A
A
TO-263 (IXTA)  
IAR  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
TC = 25°C  
7
20  
400  
A
mJ  
mJ  
G
S
(TAB)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 10 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
150  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering  
TO-263 package for 10s  
300  
260  
°C  
°C  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
Md  
Mounting torque  
(TO-220)  
1.13/10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
4
3
g
g
Advantages  
Symbol  
TestConditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Easy to mount  
z
Space savings  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 30 VDC, VDS = 0  
500  
V
V
z
High power density  
3
5.5  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
µA  
µA  
TJ = 125°C  
50  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
1.1  
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
DS99320(06/05)  
© 2005 IXYS All rights reserved  
IXTA 7N60P  
IXTP 7N60P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-263 (IXTA) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
4
7
S
Ciss  
Coss  
Crss  
1080  
110  
11  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
20  
22  
55  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 50 Ω (External)  
Qg(on)  
Qgs  
20  
7
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
7
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCK  
0.83 K/W  
K/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
(TO-220)  
0.25  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
Characteristic Values  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
(TJ = 25°C, unless otherwise specified)  
L1  
L2  
L3  
L4  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
7
A
A
V
R
0.46  
0.74  
.018  
.029  
ISM  
Repetitive  
14  
TO-220 (IXTP) Outline  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 7 A  
500  
ns  
-di/dt = 100 A/µs  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXTA 7N60P  
IXTP 7N60P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
7
6
5
4
3
2
1
0
14  
12  
10  
8
V
= 10V  
8V  
V
GS  
= 10V  
8V  
GS  
7V  
7V  
6V  
6
6V  
5V  
4
2
5V  
5
0
0
0
0
1
2
3
4
6
7
8
0
3
6
9
12  
15  
18  
21  
24  
27  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
7
6
5
4
3
2
1
0
2.6  
2.4  
2.2  
2
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
1.8  
1.6  
1.4  
1.2  
1
6V  
5V  
I
= 7A  
D
I
= 3.5A  
D
0.8  
0.6  
0.4  
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
VD S - Volts  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
2.6  
2.4  
2.2  
2
8
7
6
5
4
3
2
1
0
V
= 10V  
GS  
T = 125 C  
∫
J
1.8  
1.6  
1.4  
1.2  
1
T = 25 C  
∫
J
0.8  
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2005 IXYS All rights reserved  
IXTA 7N60P  
IXTP 7N60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
12  
11  
10  
9
9
8
7
6
5
4
3
2
1
0
T = -40 C  
∫
J
∫
25 C  
8
125 C  
∫
7
6
T =125 C  
∫
J
5
25  
∫
∫
C
-40  
C
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10  
4
4.5  
5
5.5  
6
6.5  
7
I D - Amperes  
VG S - Volts  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
20  
18  
16  
14  
12  
10  
8
10  
9
8
7
6
5
4
3
2
1
0
V
= 300V  
DS  
I
I
= 3.5A  
D
G
= 10mA  
T = 125  
J
∫
C
6
∫
T = 25 C  
J
4
2
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
2
4
6
8
10 12 14 16 18 20 22  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10000  
1000  
100  
10  
1.00  
f = 1MHz  
C
iss  
C
oss  
C
rss  
30  
1
0.10  
0.001  
0
5
10  
15  
20  
25  
35  
40  
0.01  
0.1  
1
10  
VD S - Volts  
Insions.  
Pulse Width - Seconds  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
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