Advanced Technical Information
IXRP 15N120
VCES
IC25
VCE(sat) typ.
= 1200V
IGBT with Reverse
Blocking capability
=
=
25A
2.5V
2
TO-220AB
1
TAB
1 = Gate; 2, TAB = Collector; 3 = Emitter
3
Features
IGBT
• IGBT with NPT (non punch through)
structure
• reverse blocking capability
- function of series diode monolithically
integrated, no external series diode
required
- soft reverse recovery
• positive temperature coefficient of
saturation voltage
Symbol
VCES
Conditions
Maximum Ratings
± ±
TVJ = 25°C to 150°C
Continuous
1200
V
V
±
VGES
20
IC25
IC90
TC = 25°C
TC = 90°C
25
15
A
A
ICM
VCEK
VGE = 0/15 V; RG = 47 Ω; TVJ = 125°C
RBSOA; Clamped inductive load; L = 100 µH
30
600
A
V
• Epoxy of package meets UL 94V-0
SCSOA
Ptot
600 V
10
µs
W
TC = 25°C
300
Applications
Converters requiring reverse blocking
capability:
- current source inverters
- matrix converters
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
- bi-directional switches
- resonant converters
- induction heating
- auxiliary switches for soft switching
in the main current path
min. typ. max.
VCE(sat)
IC = 10 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
2.5
3.3
2.95
V
V
VGE(th)
ICES
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V
3
6
V
TVJ = 25°C
TVJ = 125°C
50
µA
mA
1.0
36
±
IGES
VCE = 0 V; VGE
=
20 V
500
nA
nC
QGon
VCE = 120 V; VGE = 15 V; IC = 10 A
IXYS reserves the right to change limits, test conditions and dimensions.
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