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IXRA15N120

型号:

IXRA15N120

品牌:

IXYS[ IXYS CORPORATION ]

页数:

3 页

PDF大小:

54 K

IXRP 15N120  
IXRA 15N120  
Advanced Technical Information  
VCES = 1200 V  
IC25 = 25 A  
VCE(sat) = 2.5 V typ.  
IGBT with Reverse  
Blocking capability  
IXRP 15N120  
IXRA 15N120  
C
TO-
G
G
G
C
C (TAB)  
C
E
E
TO-263  
E
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
Features  
IGBT  
• IGBT with NPT (non punch through)  
structure  
• reverse blocking capability  
- function of series diode monolithically  
integrated, no external series diode  
required  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
Continuous  
1200  
20  
V
V
VGES  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
25  
15  
A
A
- soft reverse recovery  
• positive temperature coefficient of  
saturation voltage  
• Epoxy of TO-247 package meets  
UL 94V-0  
ICM  
VCEK  
VGE = 0/15 V; RG = 47 ; TVJ = 125°C  
RBSOA; Clamped inductive load; L = 100 µH  
30  
600  
A
V
SCSOA  
Ptot  
600 V  
10 µs  
Applications  
TC = 25°C  
300  
W
Converters requiring reverse blocking  
capability:  
- current source inverters  
- matrix converters  
- bi-directional switches  
- resonant converters  
- induction heating  
- auxiliary switches for soft switching  
in the main current path  
Symbol  
VCE(sat)  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
IC = 10 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.5 2.95  
3.3  
V
V
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
3
6
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
50 µA  
mA  
1.0  
36  
IGES  
VCE = 0 V; VGE  
=
20 V  
500 nA  
nC  
QGon  
VCE = 120 V; VGE = 15 V; IC = 10 A  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
1 - 3  
IXRP 15N120  
IXRA 15N120  
Advanced Technical Information  
IGBT  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
typ.  
External diode DSEP 30-12 - diagramm see Fig. 1  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
22  
18  
210  
32  
1.1  
0.13  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load; TVJ = 125°C  
VCE = 600 V; IC = 10 A  
VGE = 15 V; RG = 47 Ω  
Internal diode - diagramm see Fig. 2  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec int  
17.5  
16  
212  
41  
3.0  
0.1  
ns  
ns  
ns  
Inductive load; TVJ = 125°C  
VCE = 600 V; IC = 10 A  
VGE = 15 V; RG = 47 Ω  
ns  
mJ  
mJ  
mJ  
0.65  
IRM  
trr  
IF = 10 A; diC/dt = -800 A/µs; TVJ = 125°C  
VCE = -600 V; VGE = 15 V  
25  
300  
A
ns  
RthJC  
0.65  
K/W  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-55...+150  
-55...+125  
°C  
°C  
Md  
FC  
mounting torque  
mounting force with clip  
0.8 - 1.2  
20...120  
Nm  
N
Symbol  
Conditions  
Characteristic Values  
typ.  
0.25  
6
RthCH  
with heatsink compound  
K/W  
g
Weight  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
2 - 3  
IXRP 15N120  
IXRA 15N120  
Advanced Technical Information  
Fig. 1 turn-on/turn-off with  
externaldiode(DSEP30-12)  
Fig. 2 turn-on/turn-off with internal diode  
TO-263 AA (D2 PAK) incl. middle lead  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.68  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.066  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
ØP  
A
E
TO-220 AB Outline  
A1  
H
Q
D
L1  
A2  
L
c
b1  
b
e
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
3 - 3  
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